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In-situ electronic conductivity measurements of LiNi0.45Mn1.485Cr0.05O4 thin films using all-solid-state thin-film batteries
Electrochemistry Communications ( IF 4.7 ) Pub Date : 2017-12-23 , DOI: 10.1016/j.elecom.2017.12.021
Morihiro Sato , Takayuki Yamamoto , Munekazu Motoyama , Yasutoshi Iriyama

Total electronic conductivity (σetotal) of LiNi0.45Mn1.485Cr0.05O4 thin film (LNM–Cr: 40 nm in thickness) between 3.5 and 4.9 V (vs. Li metal anode) was measured using all-solid-state thin-film battery (Li/LiPON/LPO/LNM–Cr) fabricated on interdigitated array (IDA) electrode. The LNM–Cr with disordered spinel phase was prepared by pulsed laser deposition on the IDA electrode. The σetotal depended on the voltage and reversibly changed regardless of lithium extraction/insertion process. Variation trends of the σetotal were in good agreement with the previous reports using the chemically delithiated powder materials. Grain boundary resistance contributes to the σetotal depending on the voltage probably because of the formation of double Schottky barrier at the grain boundaries.



中文翻译:

使用全固态薄膜电池原位测量LiNi 0.45 Mn 1.485 Cr 0.05 O 4薄膜的电导率

总电子传导率(σ Ë)的LiNi的0.45的Mn 1.485的Cr 0.05 Ò 4薄膜(LNM铬:在厚度为40nm)3.5和4.9(相对于Li金属阳极)之间,使用全固态薄测量膜电池(Li / LiPON / LPO / LNM-Cr)制造在叉指阵列(IDA)电极上。通过在IDA电极上进行脉冲激光沉积,制备出具有无序尖晶石相的LNM-Cr。所述σ ë依赖于电压和无论锂提取/插入处理的可逆改变。在σ的变化趋势Ë与以前使用化学脱锂粉末材料的报告非常吻合。晶界电阻有助于σ È取决于电压可能是因为在晶界处形成双肖特基势垒的。

更新日期:2017-12-23
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