Irradiation damage of the materials depends on the irradiation dose and the intrinsic property of the material. In this paper, the high purity hot pressing sintered SiC ceramics with very few second phase and excellent crystallinity were prepared as the target materials, and the high irradiation dose up to 0.95 and 3.16 dpa respectively were chosen. The as-sintered SiC ceramics were irradiated with a 160 keV Ar ion beam at 600 °C. X-ray photoelectron spectroscopy, Raman spectrum, transmission electron microscopy and nanoindentation tests were utilized to analyze the microstructure variations on the surface of irradiated SiC, and it was found that the irradiated crystals kept crystallinity, although amorphization of SiC was generated with 10–25 nm depth, following with a mixture of point defect clusters and extended defects. Furthermore, it is also evident that there is a balance between irradiated-induced damages buildup and dynamic annealing of defects in high temperature.

材料的辐照损伤取决于辐照剂量和材料的固有特性。本文以第二相极少，结晶度极高的高纯度热压烧结SiC陶瓷为靶材，并分别选择了高达0.95 dpa和3.16 dpa的高辐照剂量。在600°C下用160 keV Ar离子束辐照烧结后的SiC陶瓷。利用X射线光电子能谱，拉曼光谱，透射电子显微镜和纳米压痕试验分析了被辐照SiC表面的微观结构变化，发现被辐照的晶体保持了结晶度，尽管SiC的非晶化是在10–25时产生的。纳米深度，随后是点缺陷簇和扩展缺陷的混合体。此外，