Abstract In this work, we report on the growth of pseudomorphic and highly doped InAs(Si)/GaSb(Si) heterostructures on p-type (0 0 1)-oriented GaSb substrate and the fabrication and characterization of n+/p+ Esaki tunneling diodes. We particularly study the influence of the Molecular Beam Epitaxy shutter sequences on the structural and electrical characteristics of InAs(Si)/GaSb(Si) Esaki diodes structures. We use real time Reflection High Electron Diffraction analysis to monitor different interface stoichiometry at the tunneling interface. With Atomic Force Microscopy, X-ray diffraction and Transmission Electron Microscopy analyses, we demonstrate that an “InSb-like” interface leads to a sharp and defect-free interface exhibiting high quality InAs(Si) crystal growth contrary to the “GaAs-like” one. We then prove by means of Secondary Ion Mass Spectroscopy profiles that Si-diffusion at the interface allows the growth of highly Si-doped InAs/GaSb diodes without any III-V material deterioration. Finally, simulations are conducted to explain our electrical results where a high Band to Band Tunneling (BTBT) peak current density of Jp = 8 mA/μm2 is achieved.

中文翻译：

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在 n + InAs(Si)/p + GaSb(Si) Esaki 二极管的隧穿界面生长过程中仔细的化学计量监测和掺杂控制

摘要 在这项工作中，我们报告了在 p 型 (0 0 1) 取向 GaSb 衬底上假晶和高掺杂 InAs(Si)/GaSb(Si) 异质结构的生长以及 n+/p+ Esaki 隧道二极管的制造和表征. 我们特别研究了分子束外延快门序列对 InAs(Si)/GaSb(Si) Esaki 二极管结构的结构和电气特性的影响。我们使用实时反射高电子衍射分析来监测隧道界面处的不同界面化学计量。通过原子力显微镜、X 射线衍射和透射电子显微镜分析，我们证明了“类 InSb”界面导致呈现出与“类 GaAs”相反的高质量 InAs(Si) 晶体生长的尖锐且无缺陷的界面。 “ 一。然后，我们通过二次离子质谱图证明界面处的 Si 扩散允许高度 Si 掺杂的 InAs/GaSb 二极管的生长，而不会造成任何 III-V 材料劣化。最后，进行模拟以解释我们的电气结果，其中实现了 Jp = 8 mA/μm2 的高带间隧道 (BTBT) 峰值电流密度。