Post-irradiation annealing was performed on a 304L SS that was irradiated to 5.9 dpa in the Barsebäck 1 BWR reactor. Evolution of dislocation loops, radiation-induced solute clusters and radiation-induced segregation at the grain boundary was investigated following thermal annealing at 500 °C and 550 °C up to 20 h. Dislocation loops, Ni-Si and Al-Cu clusters, and enrichment of Ni, Si and depletion of Cr at the grain boundary were observed in the as-irradiated condition. Dislocation loop size did not change significantly after annealing at 550 °C for 5 h but the loop number density decreased considerably and loops mostly disappeared after annealing at 550 °C for 20 h. The average size of Ni-Si and Al-Cu clusters increased while the number density decreased with annealing. The increase in cluster size was due to diffusion of solutes rather than cluster coarsening. Significant volume fractions of Ni-Si and Al-Cu clusters still remained after annealing at 550 °C for 20 h. Substantial recovery of Cr and Ni at the grain boundary was observed after annealing at 550 °C for 5 h but neither Cr nor Ni was fully recovered after 20 h. Annihilation of dislocation loops, driven by the thermal vacancy concentration gradient caused by the strain field and stacking fault associated with the loops appeared to be faster than annihilation of solute clusters and recovery of Ni and Si at the grain boundary, both of which are driven by the solute concentration gradients.

辐照后退火是在304L SS上进行的，该辐照在Barsebäck1 BWR反应器中辐照至5.9 dpa。在500°C和550°C下进行长达20小时的热退火后，研究了晶界处位错环，辐射诱导的溶质团簇和辐射诱导的偏析的演变。在辐照条件下，观察到位错环，Ni-Si和Al-Cu团簇以及晶界处Ni，Si的富集和Cr的耗尽。在550°C退火5 h后，位错环的大小没有显着变化，但环数密度显着降低，并且在550°C退火20 h后，环大部分消失。Ni-Si和Al-Cu团簇的平均尺寸随着退火而增加，而数密度降低。团簇尺寸的增加是由于溶质的扩散而不是团簇粗化。在550°C退火20 h后，Ni-Si和Al-Cu团簇的体积分数仍然很大。在550°C退火5 h后，观察到晶界中Cr和Ni的大量回收，但20 h后Cr和Ni均未完全回收。位错环的ni灭是由应变场和与环相关的堆垛层错引起的热空位浓度梯度驱动的，看起来比溶质团簇的and灭和晶界处Ni和Si的恢复都快，这两者都是由溶质团簇驱动的。溶质浓度梯度。在550°C退火5 h后，观察到晶界中Cr和Ni的大量回收，但20 h后Cr和Ni均未完全回收。由应变场和与环相关的堆垛层错引起的热空位浓度梯度驱动的位错环的ni灭似乎快于溶质团簇的and灭和晶界处Ni和Si的恢复，而这两者都是由溶质团簇驱动的。溶质浓度梯度。在550°C退火5 h后，观察到晶界中Cr和Ni的大量回收，但20 h后Cr和Ni均未完全回收。位错环的ni灭是由应变场和与环相关的堆垛层错引起的热空位浓度梯度驱动的，看起来比溶质团簇的and灭和晶界处Ni和Si的恢复都快，这两者都是由溶质团簇驱动的。溶质浓度梯度。