Abstract An effective method of using polycrystalline silicon (poly-Si) planar slabs as seed materials for industrial low-cost and high-quality seed-assisted multicrystalline silicon has been presented. The interspace volume of the poly-Si slab seed layer is much lower compared to poly-Si nugget seed layer, so the initial grains of the slab-assisted ingot are much more uniform than those of the nugget-assisted ingot. Photoluminescence (PL) and minority lifetime measurements showed a considerable reduction in dislocation cluster density in the slab-assisted ingot, especially at the middle and top regions. The average cell efficiency based on the slab-assisted ingot is enhanced by 0.12% in absolute value compared to the nugget-assisted ingot. Moreover, the bottom edge of slab-assisted ingot can be fully recycled through existing cleaning process without remaining SiC particles, which saves considerable materials and slicing costs in mass manufacturing compared to nugget-assisted growth method.

中文翻译：

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多晶硅片作为种子辅助的多晶硅

摘要 提出了一种利用多晶硅（poly-Si）平板作为工业低成本、高质量晶种辅助多晶硅晶种材料的有效方法。与多晶硅熔核种子层相比，多晶硅板坯晶种层的间隙体积要小得多，因此板坯辅助锭的初始晶粒比熔核辅助锭的初始晶粒均匀得多。光致发光 (PL) 和少数寿命测量表明，板坯辅助铸锭中的位错簇密度显着降低，尤其是在中间和顶部区域。与熔核辅助锭相比，基于板坯辅助锭的平均电池效率绝对值提高了 0.12%。而且，