We report an influence of abnormal mixing effect of host systems having undesirable energy level and transport level in the emission layer (EML). Rather, we focused on their device performance and stability (e.g. driving lifetime) when it was prepared by solution-process. The resultant green phosphorescent organic light emitting diodes (s-OLEDs) showed reasonable device performance and interesting photo-physical properties, which revealed that we can achieve good performance if an appropriate compromise between the factors which govern a charge transport and an energy transfer processes can be realized albeit the EML has undesirable host systems with both bad energy level matching (e.g., HOMO, LUMO levels) and charge transport properties. In this study, a high performance of the s-OLEDs by controlling photo-physical pathways such as exciton quenching process (e.g. triplet-triplet annihilation). Besides, such kind of change in photo-physical pathway may be optimized by controlling the charge balance (i.e. carrier transport behaviour) where we intentionally selected N- and P-type host materials (denote NH and PH, respectively) with abnormal HOMO and LUMO energy levels.

我们报告了在发射层（EML）中具有不希望的能量水平和传输水平的主机系统的异常混合效果的影响。相反，当我们通过解决方案过程准备设备时，我们专注于其设备性能和稳定性（例如，驱动寿命）。所产生的绿色磷光有机发光二极管（s-OLED）显示出合理的器件性能和令人感兴趣的光物理特性，这表明，如果控制电荷传输和能量转移过程的因素之间能够适当折衷，那么我们可以实现良好的性能。尽管EML具有不良的能级匹配（例如，HOMO，LUMO能级）和电荷传输性质均不理想的宿主系统，但仍可以实现。在这项研究中，通过控制光物理路径（例如激子猝灭过程（例如，三重态-三重态an灭））来实现s-OLED的高性能。此外，可以通过控制电荷平衡（即载流子的传输行为）来优化这种光物理路径的变化，在这种情况下，我们有意选择了具有异常HOMO和LUMO的N型和P型主体材料（分别表示NH和PH）能量水平。