Application of High-Throughput Seebeck Microprobe Measurements on Thermoelectric Half-Heusler Thin Film Combinatorial Material Libraries,ACS Combinatorial Science

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Application of High-Throughput Seebeck Microprobe Measurements on Thermoelectric Half-Heusler Thin Film Combinatorial Material Libraries
ACS Combinatorial Science Pub Date : 2017-12-21 00:00:00 , DOI: 10.1021/acscombsci.7b00019
Pawel Ziolkowski ₁ , Matthias Wambach ₂ , Alfred Ludwig ₂ , Eckhard Mueller _{1,

3}

Affiliation

In view of the variety and complexity of thermoelectric (TE) material systems, combinatorial approaches to materials development come to the fore for identifying new promising compounds. The success of this approach is related to the availability and reliability of high-throughput characterization methods for identifying interrelations between materials structures and properties within the composition spread libraries. A meaningful characterization starts with determination of the Seebeck coefficient as a major feature of TE materials. Its measurement, and hence the accuracy and detectability of promising material compositions, may be strongly affected by thermal and electrical measurement conditions. This work illustrates the interrelated effects of the substrate material, the layer thickness, and spatial property distributions of thin film composition spread libraries, which are studied experimentally by local thermopower scans by means of the Potential and Seebeck Microprobe (PSM). The study is complemented by numerical evaluation. Material libraries of the half-Heusler compound system Ti–Ni–Sn were deposited on selected substrates (Si, AlN, Al₂O₃) by magnetron sputtering. Assuming homogeneous properties of a film, significant decrease of the detected thermopower S_m can be expected on substrates with higher thermal conductivity, yielding an underestimation of materials thermopower between 15% and 50%, according to FEM (finite element methods) simulations. Thermally poor conducting substrates provide a better accuracy with thermopower underestimates lower than 8%, but suffer from a lower spatial resolution. According to FEM simulations, local scanning of sharp thermopower peaks on lowly conductive substrates is linked to an additional deviation of the measured thermopower of up to 70% compared to homogeneous films, which is 66% higher than for corresponding cases on substrates with higher thermal conductivity of this study.

中文翻译：

高通量塞贝克微探针测量在热电半霍斯勒薄膜组合材料库中的应用

鉴于热电（TE）材料系统的多样性和复杂性，材料开发的组合方法应运而生，以确定新的有前途的化合物。该方法的成功与高通量表征方法的可用性和可靠性有关，该方法可用于识别成分分布文库中的材料结构与特性之间的相互关系。有意义的表征始于确定塞贝克系数作为TE材料的主要特征。热和电测量条件可能会极大地影响其测量结果，从而保证有前途的材料成分的准确性和可检测性。这项工作说明了基板材料，层厚度，薄膜组成扩散库的空间和空间特性分布，这是通过势能和塞贝克微探针（PSM）通过局部热功率扫描进行实验研究的。这项研究得到了数值评估的补充。半霍斯勒化合物系统Ti–Ni–Sn的材料库沉积在选定的衬底（Si，AlN，Al₂ O ₃）通过磁控溅射。假设薄膜具有均一的特性，则检测到的热功率S _m会大大降低根据FEM（有限元方法）模拟，可以预期在导热系数更高的基板上产生的热功率低估了15％至50％。导热不良的基板可提供更高的精度，而热功率会被低估低于8％，但空间分辨率较低。根据FEM模拟，与均质膜相比，在低导电性基板上对尖锐的热电峰进行局部扫描会导致所测得的热电额外偏差高达70％，这比具有较高导热率的基板的相应情况要高66％这项研究。

更新日期：2017-12-21

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