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High Seebeck Coefficient and Power Factor in n‐Type Organic Thermoelectrics
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-12-21 , DOI: 10.1002/aelm.201700501 Guangzheng Zuo 1 , Zhaojun Li 2 , Ergang Wang 2 , Martijn Kemerink 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-12-21 , DOI: 10.1002/aelm.201700501 Guangzheng Zuo 1 , Zhaojun Li 2 , Ergang Wang 2 , Martijn Kemerink 1
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The n‐type thermoelectric properties of [6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) are investigated for different solution‐based doping methods. A novel inverse‐sequential doping method where the semiconductor (PCBM) is deposited on a previously cast dopant 4‐(1,3‐dimethyl‐2,3‐dihydro‐1H‐benzoimidazol‐2‐yl)‐N,N‐diphenylaniline film to achieve a very high power factor PF ≈ 35 µW m−1 K−2 with a conductivity σ ≈ 40 S m−1 is introduced. It is also shown that n‐type organic semiconductors obey the −1/4 power law relation between Seebeck coefficient S and σ that are previously found for p‐type materials. An analytical model on basis of variable range hopping unifies these results. The power law for n‐type materials is shifted toward higher conductivities by two orders of magnitude with respect to that of p‐type, suggesting strongly that n‐type organic semiconductors can eventually become superior to their p‐type counterparts. Adding a small fraction lower lowest unoccupied molecular orbital material (core‐cyanated naphthalene diimide) into PCBM leads to a higher S for inverse‐sequential doping but not for bulk doping due to different morphologies.
中文翻译：
n型有机热电元件中的高塞贝克系数和功率因数
针对不同的基于溶液的掺杂方法，研究了[6,6]-苯基-C 61-丁酸甲酯（PCBM）的n型热电性质。一种新颖的逆序掺杂方法，其中将半导体（PCBM）沉积在预先浇铸的掺杂剂4-（1,3-二甲基-2,3-二氢-1H-苯并咪唑-2-基）-N，N-二苯基苯胺薄膜上为了实现非常高的功率因数PF≈35 µW m -1 K -2，电导率σ≈40 S m -1。还表明，n型有机半导体遵守塞贝克系数S之间的-1/4幂定律关系和σ是先前在p型材料中发现的。基于可变范围跳变的分析模型统一了这些结果。与p型相比，n型材料的功率定律向更高的电导率转变了两个数量级，这强烈表明n型有机半导体最终将变得优于其p型对应物。向PCBM中添加一小部分较低的最低最低未占据分子轨道材料（核氰化萘二酰亚胺）会导致反序掺杂的较高S，但由于形态不同，导致批量掺杂的S较高。
更新日期：2017-12-21
中文翻译：
n型有机热电元件中的高塞贝克系数和功率因数
针对不同的基于溶液的掺杂方法，研究了[6,6]-苯基-C 61-丁酸甲酯（PCBM）的n型热电性质。一种新颖的逆序掺杂方法，其中将半导体（PCBM）沉积在预先浇铸的掺杂剂4-（1,3-二甲基-2,3-二氢-1H-苯并咪唑-2-基）-N，N-二苯基苯胺薄膜上为了实现非常高的功率因数PF≈35 µW m -1 K -2，电导率σ≈40 S m -1。还表明，n型有机半导体遵守塞贝克系数S之间的-1/4幂定律关系和σ是先前在p型材料中发现的。基于可变范围跳变的分析模型统一了这些结果。与p型相比，n型材料的功率定律向更高的电导率转变了两个数量级，这强烈表明n型有机半导体最终将变得优于其p型对应物。向PCBM中添加一小部分较低的最低最低未占据分子轨道材料（核氰化萘二酰亚胺）会导致反序掺杂的较高S，但由于形态不同，导致批量掺杂的S较高。
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