The role of hydrophilic and hydrophobic substrate with graphene is crucial to define the interfacial properties of graphene (G)‐based heterostructures in the field of electronic device applications. Herein, the novel strategy of graphene wrapped hydrophilic/hydrophobic silicon nanowires (SiNWs) heterostructure is reported for highly enhanced electron field emission (EFE) studies with low turn‐on field. The combined effect of sharp edged graphene layers induced by different kinds of SiNWs is envisioned to enhance field enhancement factors and turn‐on voltage. The systematic results show the best EFE properties of hydrophilic SiNWs‐G based field emitters, with a lower turn‐on voltage of 0.53 V µm⁻¹, a current density of 2.7 mA cm⁻², and a higher field enhancement factor (β) of 14825. In addition, both the SiNWs‐G‐based field emitters are tested as the practical flat panel displays, where the hydrophilic‐based display exhibits at low voltage as 210 V. The superior EFE performance of hydrophilic SiNWs‐G based field emitters are ascribed to their large distortion field. Since more electrons can be trapped for easy tunneling, this increases the emission sites, and thereby contributes to a high enhancement field. This striking result from hydrophilic SiNWs‐G field emitters can be tailored for high‐performance EFE device applications.

中文翻译：

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亲水和疏水界面在基于石墨烯的一维异质结构中高度增强电子发射的重要作用

石墨烯的亲水性和疏水性底物的作用对于定义电子设备应用领域中基于石墨烯（G）的异质结构的界面性质至关重要。本文报道了石墨烯包裹的亲水/疏水硅纳米线（SiNWs）异质结构的新策略，用于在低导通电场下高度增强的电子场发射（EFE）研究。可以预见，由不同种类的SiNW引起的边缘锐利的石墨烯层的组合效应可增强场增强因子和导通电压。系统结果表明，基于亲水性SiNWs‐G的场致发射器具有最佳的EFE性能，其导通电压较低，为0.53 V µm ^-1，电流密度为2.7 mA cm ^-2，并且具有更高的场增强因子（β）14825。此外，两个基于SiNWs-G的场致发射器均已作为实用的平板显示器进行了测试，其中基于亲水性的显示器在210 V的低电压下表现出优势。亲水性基于SiNWs-G的场致发射器的EFE性能归因于其较大的畸变场。由于可以捕获更多的电子以便于隧穿，因此增加了发射位点，从而有助于提高电场强度。亲水性SiNWs-G场发射器的惊人结果可针对高性能EFE器件应用进行定制。