Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system,Journal of Materials Chemistry C

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Inserted metals for low-energy magnetoelectric switching in a Cr2O3/ferromagnet interfacial exchange-biased thin film system
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-12-20 00:00:00 , DOI: 10.1039/c7tc05375d
Shujun Ye _{1,

2,

3,

4} , Tomohiro Nozaki _{1,

2,

3,

4} , Yoshinori Kotani _{4,

5,

6} , Kentaro Toyoki _{4,

5,

6} , Tetsuya Nakamura _{4,

5,

6} , Syougo Yonemura _{4,

7,

8} , Tatsuo Shibata _{4,

7,

8} , Satya Prakash Pati _{1,

2,

3,

4} , Muftah Al-Mahdawi _{1,

2,

3,

4} , Yohei Shiokawa _{1,

2,

3,

4} , Masashi Sahashi _{1,

2,

3,

4,

9}

Affiliation

An inserted metal (IM) layer (such as Pt, Ru, or Cr) is typically fabricated between Cr₂O₃ and the ferromagnet in magnetoelectric switched antiferromagnet/ferromagnet exchange-biased thin film systems. The IM layer is used as a “spacer layer” to prevent oxidization of Co and enhance the blocking temperature. In this work, we found that the magnetic properties of these thin film systems vary depending on the type of IM, and they could be reproduced by bilayers or multilayers of Co and IM thin films. We also found that the IM layer was spin-polarized by the Co ferromagnetic layer based on X-ray magnetic circular dichroism data. These results suggest that the IM does not work separately as a “spacer layer”, but rather it is an integral component of Co-based stacked ferromagnetic films in magnetoelectric switched Cr₂O₃/ferromagnet exchange-biased systems. Furthermore, we found that some stacked ferromagnetic films easily exhibit a low unidirectional anisotropy energy (J_k), which may be a good way to decrease the magnetoelectric switching energy of antiferromagnets for practical device applications.

中文翻译：

Cr ₂ O ₃ /铁磁体界面交换偏置薄膜系统中用于低能磁电开关的插入金属

通常在Cr ₂ O ₃之间制造插入的金属（IM）层（例如Pt，Ru或Cr）磁电开关反铁磁体/铁磁体交换偏置薄膜系统中的铁磁体。IM层用作“隔离层”，以防止Co氧化并提高阻断温度。在这项工作中，我们发现这些薄膜系统的磁性取决于IM的类型，并且可以通过Co和IM薄膜的双层或多层复制。我们还发现，基于X射线磁性圆二色性数据，IM层被钴铁磁性层自旋极化。这些结果表明，IM不能单独作为“隔离层”工作，而是它是磁电转换Cr ₂ O ₃中Co基堆叠铁磁膜的组成部分。/铁磁体交流偏置系统。此外，我们发现一些堆叠的铁磁薄膜很容易表现出低的单向各向异性能（J _k），这可能是降低反铁磁体的磁电转换能量用于实际设备应用的好方法。

更新日期：2017-12-20

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