The bottom-up fabrication of regular nanowire (NW) arrays on a masked substrate is technologically relevant, but the growth dynamic is rather complex due to the superposition of severe shadowing effects that vary with array pitch, NW diameter, NW height, and growth duration. By inserting GaAsP marker layers at a regular time interval during the growth of a self-catalyzed GaP NW array, we are able to retrieve precisely the time evolution of the diameter and height of a single NW. We then propose a simple numerical scheme which fully computes shadowing effects at play in infinite arrays of NWs. By confronting the simulated and experimental results, we infer that re-emission of Ga from the mask is necessary to sustain the NW growth while Ga migration on the mask must be negligible. When compared to random cosine or random uniform re-emission from the mask, the simple case of specular reflection on the mask gives the most accurate account of the Ga balance during the growth.

中文翻译：

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测量和建模的自催化GaP纳米线阵列的生长动力学。

自底向上的常规纳米线（NW）阵列在蒙版基板上的制造在技术上是相关的，但是由于严重的阴影效应的叠加会导致动态增长，而这种复杂的阴影效应随阵列间距，NW直径，NW高度和生长持续时间而变化，因此其生长动态相当复杂。通过在自催化GaP NW阵列的生长过程中以规则的时间间隔插入GaAsP标记层，我们能够精确地检索单个NW的直径和高度的时间演变。然后，我们提出了一个简单的数值方案，该方案可以完全计算NW的无限阵列在运行时的阴影效果。通过面对模拟和实验结果，我们推断从掩模再发射Ga是维持NW增长所必需的，而Ga在掩模上的迁移必须可​​忽略不计。