当前位置：
X-MOL 学术
›
ACS Photonics
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency
ACS Photonics ( IF 6.5 ) Pub Date : 2017-12-18 00:00:00 , DOI: 10.1021/acsphotonics.7b01387 Daehwan Jung 1 , Zeyu Zhang 2 , Justin Norman 3 , Robert Herrick 4 , M. J. Kennedy 2 , Pari Patel 2 , Katherine Turnlund 1 , Catherine Jan 4 , Yating Wan 2 , Arthur C. Gossard 1, 2, 3 , John E. Bowers 1, 2, 3
ACS Photonics ( IF 6.5 ) Pub Date : 2017-12-18 00:00:00 , DOI: 10.1021/acsphotonics.7b01387 Daehwan Jung 1 , Zeyu Zhang 2 , Justin Norman 3 , Robert Herrick 4 , M. J. Kennedy 2 , Pari Patel 2 , Katherine Turnlund 1 , Catherine Jan 4 , Yating Wan 2 , Arthur C. Gossard 1, 2, 3 , John E. Bowers 1, 2, 3
Affiliation
|
Quantum dot lasers epitaxially grown on Si are promising for an efficient light source for silicon photonics. Recently, considerable progress has been made to migrate 1.3 μm quantum dot lasers from off-cut Si to on-axis (001) Si substrates. Here, we report significantly improved performance and reliability of quantum dot lasers enabled by a low threading dislocation density GaAs buffer layer. Continuous-wave threshold currents as low as 6.2 mA and output powers of 185 mW have been achieved at 20 °C. Reliability tests after 1500 h at 35 °C showed an extrapolated mean-time-to-failure of more than a million hours. Direct device transparency and amplified spontaneous emission measurements reveal an internal optical loss as low as 2.42 cm–1 and injection efficiency of 87%. This represents a significant stride toward efficient, scalable, and reliable III–V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with CMOS foundries.
中文翻译：
同轴（001）硅上的高可靠低阈值InAs量子点激光器，注入效率为87％
外延生长在Si上的量子点激光器有望成为硅光子学的高效光源。近来，在将1.3μm量子点激光器从非切割Si迁移到同轴（001）Si衬底方面取得了长足的进步。在这里，我们报告了通过低线程位错密度GaAs缓冲层实现的量子点激光器的性能和可靠性显着提高。在20°C时可实现低至6.2 mA的连续波阈值电流和185 mW的输出功率。在35°C下1500小时后的可靠性测试表明，平均失效时间超过一百万小时。直接的设备透明性和放大的自发发射测量结果显示内部光损耗低至2.42 cm –1注射效率为87％。这代表了在光轴集成电路上与CMOS铸造厂完全兼容的同轴Si基板上高效，可扩展且可靠的III–V激光器的重大进步。
更新日期：2017-12-18
中文翻译：
同轴（001）硅上的高可靠低阈值InAs量子点激光器，注入效率为87％
外延生长在Si上的量子点激光器有望成为硅光子学的高效光源。近来，在将1.3μm量子点激光器从非切割Si迁移到同轴（001）Si衬底方面取得了长足的进步。在这里，我们报告了通过低线程位错密度GaAs缓冲层实现的量子点激光器的性能和可靠性显着提高。在20°C时可实现低至6.2 mA的连续波阈值电流和185 mW的输出功率。在35°C下1500小时后的可靠性测试表明，平均失效时间超过一百万小时。直接的设备透明性和放大的自发发射测量结果显示内部光损耗低至2.42 cm –1注射效率为87％。这代表了在光轴集成电路上与CMOS铸造厂完全兼容的同轴Si基板上高效，可扩展且可靠的III–V激光器的重大进步。
京公网安备 11010802027423号