Two-dimensional (2D) nanomaterials have recently attracted considerable attention due to their promising applications in next-generation electronics and optoelectronics. In particular, the large-scale synthesis of high-quality 2D materials is an essential requirement for their practical applications. Herein, we demonstrate the wafer-scale synthesis of highly crystalline and homogeneous monolayer WS₂ by an enhanced chemical vapor deposition (CVD) approach, in which precise control of the precursor vapor pressure can be effectively achieved in a multi-temperature zone horizontal furnace. In contrast to conventional synthesis methods, the obtained monolayer WS₂ has excellent uniformity both in terms of crystallinity and morphology across the entire substrate wafer grown (e.g., 2 inches in diameter), as corroborated by the detailed characterization. When incorporated in typical rigid photodetectors, the monolayer WS2 leads to a respectable photodetection performance, with a responsivity of 0.52 mA/W, a detectivity of 4.9 × 10⁹ Jones, and a fast response speed (< 560 μs). Moreover, once fabricated as flexible photodetectors on polyimide, the monolayer WS₂ leads to a responsivity of up to 5 mA/W. Importantly, the photocurrent maintains 89% of its initial value even after 3,000 bending cycles. These results highlight the versatility of the present technique, which allows its applications in larger substrates, as well as the excellent mechanical flexibility and robustness of the CVD-grown, homogenous WS₂ monolayers, which can promote the development of advanced flexible optoelectronic devices.

中文翻译：

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通过增强的化学气相沉积法，对用于高性能柔性光电探测器的单层WS 2进行晶片级合成

由于二维（2D）纳米材料在下一代电子学和光电子学中的应用前景广阔，因此最近引起了相当大的关注。特别是，高质量2D材料的大规模合成是其实际应用的基本要求。在这里，我们演示了通过增强的化学气相沉积（CVD）方法对高度结晶且均质的单层WS ₂进行晶圆级合成，其中可以在多温度区水平炉中有效地实现对前驱物蒸汽压的精确控制。与常规合成方法相反，获得的单层WS ₂如详细表征所证实的那样，在整个生长的整个基板晶片上（例如直径为2英寸），在结晶度和形态方面都具有极好的均匀性。当结合到典型的刚性光电探测器中时，单层WS2带来可观的光电探测性能，其响应度为0.52 mA / W，探测度为4.9×10 ⁹ Jones，响应速度快（<560μs）。而且，一旦在聚酰亚胺上制成柔性光电探测器，单层WS ₂导致高达5 mA / W的响应度。重要的是，即使经过3,000次弯曲后，光电流仍保持其初始值的89％。这些结果凸显了本技术的多功能性，这使其可以在较大的基材中应用，以及CVD生长的均质WS ₂单层的出色的机械柔韧性和耐用性，可以促进先进的柔性光电器件的发展。