Scintillating materials, as a class of luminescent materials, are highly demanded for practical use in the high-energy detection. However, the applications are often hampered by their low light yield (LY) or long decay time for many traditional scintillators. In this work, upon nitrogen anion doping, scintillation performance in layered borate Ba₃In(B₃O₆)₃ (BIB) has been excellently enhanced with high XEL intensity of ～3 times as large as that of commercial Bi₄Ge₃O₁₂ (BGO) and ultra-fast fluorescent decay time of ～1.25 ns. To shed light on origins of the intrinsic violet-blue emission, we measured the in-situ vacuum ultraviolet excited (VUV) emission spectra of N-BIB ceramic. Combined with experiments and first principles calculations, the band-gap reduction and donor-acceptor density increasing by nitrogen (N) doping is responsible for the enhancement of scintillation performance for N-doped Ba₃In(B₃O₆)₃. Moreover, nitrogen anion doping rather than conventional cation doping is found to be also applicable to other intrinsic luminescent materials for enhancing performance.

闪烁材料作为一类发光材料，在高能检测中的实际应用是非常需要的。但是，对于许多传统的闪烁体，其应用通常因其低的光通量（LY）或较长的衰减时间而受到阻碍。在这项工作中，氮离子掺杂后，层状硼酸盐Ba ₃ In（B ₃ O ₆）₃（BIB）的闪烁性能得到了显着增强，其XEL强度约为商业Bi ₄ Ge ₃ O的3倍。₁₂（BGO）和超快的荧光衰减时间〜1.25 ns。为了阐明固有的紫蓝色发射的起源，我们测量了N-BIB陶瓷的原位真空紫外激发（VUV）发射光谱。结合实验和第一性原理计算，通过氮（N）掺杂的带隙减小和施主-受体密度的增加负责增强N掺杂的Ba ₃ In（B ₃ O ₆）₃的闪烁性能。此外，发现氮阴离子掺杂而不是常规阳离子掺杂也可应用于其他本征发光材料以增强性能。