Abstract InAs/GaSb nanoridge heterostructures were grown on V-grooved (0 0 1) Si by metal organic chemical vapor deposition. Combining the aspect ratio trapping process and a low temperature GaAs buffer, we demonstrated high quality GaSb nanoridge templates for InAs/GaSb heterostructure growth. Two different interfaces, a transitional GaAsSb and an InSb-like interface, were investigated when growing these heterostructures. A 500 °C growth temperature in conjunction with a GaAsSb interface was determined to produce the optimal interface, properly compensating for the tensile strain accumulated when growing InAs on GaSb. Without the need for a complicated switching sequence, this GaAsSb-like interface utilized at the optimized temperature is the initial step towards InAs/GaSb type II superlattice and other device structures integrated onto Si.

中文翻译：

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通过金属有机化学气相沉积在 V 槽 Si (001) 衬底上生长的 InAs/GaSb 纳米脊异质结构的异质界面研究

摘要 通过金属有机化学气相沉积在 V 型槽 (0 0 1) Si 上生长 InAs/GaSb 纳米脊异质结构。结合纵横比捕获工艺和低温 GaAs 缓冲液，我们展示了用于 InAs/GaSb 异质结构生长的高质量 GaSb 纳米脊模板。在生长这些异质结构时，研究了两种不同的界面，即过渡 GaAsSb 和类 InSb 界面。确定 500 °C 生长温度与 GaAsSb 界面相结合以产生最佳界面，适当补偿在 GaSb 上生长 InAs 时积累的拉伸应变。在不需要复杂的开关序列的情况下，这种在优化温度下使用的类 GaAsSb 界面是迈向 InAs/GaSb II 型超晶格和其他集成到 Si 上的器件结构的第一步。