Single crystals of Langasite La₃Ga₅SiO₁₄ (LGS) were irradiated by 1 MeV Kr²⁺ ions at temperature range from 298 to 898 K in order to simulate the damage effect of neutron radiation on Langasite, a candidate sensor material proposed as high temperature and pressure sensors in nuclear reactors. The microstructure evolution of LGS as functions of irradiation dose and temperature was followed by in-situ TEM observation through electron diffraction pattern. LGS is found to be sensitive to ion beam irradiation-induced amorphization from displacive heavy ions with a low critical dose of ∼0.5 ± 0.2 dpa (neutron fluence of (1.6 ± 0.6 ) × 10¹⁹ neutrons/cm²) at room temperature. The critical amorphization temperature, Tc, is determined to be 910 ± 10 K. Under simultaneous ionizing electron (300 keV, 45 nA) and displacive heavy ion irradiations (1-MeV Kr²⁺ and flux of 6.25 × 10¹¹ ions/cm²·s), LGS displayed greater stability of crystal structure against amorphization, possibly due to the electron radiation-induced recovery of displacive damage by heavy ions.

用1 MeV Kr ²⁺离子在298至898 K的温度范围内对Langasite La ₃ Ga ₅ SiO ₁₄（LGS）的单晶进行辐照，以模拟中子辐射对Langasite的破坏作用，Langasite被认为是高候选的传感器材料。核反应堆中的温度和压力传感器。LGS的微观结构随辐射剂量和温度的变化而变化，然后通过电子衍射图谱进行原位TEM观察。已发现LGS对置换性重离子的离子束辐照引起的非晶化敏感，临界剂量低至〜0.5±0.2 dpa（中子注量为（1.6±0.6）×10 ¹⁹中子/ cm ²） 在室温下。临界非晶化温度Tc确定为910±10K。在同时电离电子（300 keV，45 nA）和置换重离子辐射（1-MeV Kr ²⁺和通量为6.25×10 ¹¹离子/ cm ^{2的情况下）} ·s），LGS表现出更大的晶体结构稳定性，可防止非晶化，这可能是由于电子辐射引起的重离子置换损伤的恢复。