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Effect of Cu‐deficient layer formation in Cu(In,Ga)Se2 solar‐cell performance
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2017-12-15 , DOI: 10.1002/pip.2972 Takahito Nishimura 1, 2 , Soma Toki 1 , Hiroki Sugiura 3 , Kazuyoshi Nakada 3 , Akira Yamada 3
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2017-12-15 , DOI: 10.1002/pip.2972 Takahito Nishimura 1, 2 , Soma Toki 1 , Hiroki Sugiura 3 , Kazuyoshi Nakada 3 , Akira Yamada 3
Affiliation
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Cu‐deficient layer (CDL) on Cu(In,Ga)Se2 (CIGS) promotes Cd diffusion from CdS buffer layer and forms a valence band offset (ΔEV) between CDL and CIGS. We quantitively demonstrate the effects of CDL formation on the performance of CIGS solar cells through experiments and theoretical simulation. To investigate the effects of Cd diffusion and ΔEV by CDL, theoretical analysis was carried out for a CIGS solar cell with a surface layer which simulated the CDL at CdS/CIGS interface. It was revealed that when electron concentration in n‐type surface layer is higher than the absolute carrier concentration in CIGS absorber (ND > |NA, CIGS|), open‐circuit voltage and fill factor are improved. Additionally, ΔEV ≥ 0.15 eV leads to the highest open‐circuit voltage by suppression of interfacial recombination. Transmission electron microscope energy dispersive X‐ray spectrometry and scanning spreading resistance microscopy were employed for the same cross section of a CIGS solar cell fabricated by three‐stage process. Despite CDL with Cu/(Ga + In) of 0.31 formed on the surface had high Cd contents of 3.4 at%, its carrier concentration of 4.8 × 1010 cm−3 was lower than that of 1014 –1016 cm−3 in grain interior owing to insufficient activation of Cd atoms. These results indicate the effectiveness of ΔEV formation by introducing CDL with low Cu/(Ga + In) of 0.31 to boost CIGS solar cell performance and difficulty in realizing ND > |NA, CIGS| by surface Cd doping.
中文翻译：
缺铜层的形成对Cu（In，Ga）Se2太阳能电池性能的影响
Cu（In，Ga）Se 2（CIGS ）上的缺铜层（CDL）促进Cd从CdS缓冲层扩散，并在CDL和CIGS之间形成价带偏移（ΔE V）。我们通过实验和理论模拟定量地证明了CDL形成对CIGS太阳能电池性能的影响。为了研究CDL对Cd扩散和ΔE V的影响，对具有表面层的CIGS太阳能电池进行了理论分析，该表面层模拟了CdS / CIGS界面处的CDL。结果表明，当n型表面层中的电子浓度高于CIGS吸收剂中的绝对载流子浓度时（N D > | N A，CIGS|），开路电压和填充因数得到改善。此外，Δ È V ≥0.15电子伏特导致通过界面重组的抑制的最高开路电压。通过三步法制造的CIGS太阳能电池的同一横截面采用透射电子显微镜能量色散X射线光谱法和扫描扩展电阻显微镜。尽管表面上形成的Cu /（Ga + In）为0.31的CDL具有3.4 at％的高Cd含量，但其载流子浓度4.8×10 10 cm -3却比10 14 –10 16 cm -3的载流子浓度低。 Cd原子活化不足导致晶粒内部变质。这些结果表明Δ的有效性通过引入具有0.31的低Cu /（Ga + In）的CDL来形成E V，以提高CIGS太阳能电池的性能，并难以实现N D > | NA，CIGS | 通过表面镉掺杂。
更新日期：2017-12-15
中文翻译：
缺铜层的形成对Cu（In，Ga）Se2太阳能电池性能的影响
Cu（In，Ga）Se 2（CIGS ）上的缺铜层（CDL）促进Cd从CdS缓冲层扩散，并在CDL和CIGS之间形成价带偏移（ΔE V）。我们通过实验和理论模拟定量地证明了CDL形成对CIGS太阳能电池性能的影响。为了研究CDL对Cd扩散和ΔE V的影响，对具有表面层的CIGS太阳能电池进行了理论分析，该表面层模拟了CdS / CIGS界面处的CDL。结果表明，当n型表面层中的电子浓度高于CIGS吸收剂中的绝对载流子浓度时（N D > | N A，CIGS|），开路电压和填充因数得到改善。此外，Δ È V ≥0.15电子伏特导致通过界面重组的抑制的最高开路电压。通过三步法制造的CIGS太阳能电池的同一横截面采用透射电子显微镜能量色散X射线光谱法和扫描扩展电阻显微镜。尽管表面上形成的Cu /（Ga + In）为0.31的CDL具有3.4 at％的高Cd含量，但其载流子浓度4.8×10 10 cm -3却比10 14 –10 16 cm -3的载流子浓度低。 Cd原子活化不足导致晶粒内部变质。这些结果表明Δ的有效性通过引入具有0.31的低Cu /（Ga + In）的CDL来形成E V，以提高CIGS太阳能电池的性能，并难以实现N D > | NA，CIGS | 通过表面镉掺杂。
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