Temperature dependent electronic band structure of wurtzite GaAs nanowires,Nanoscale

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Temperature dependent electronic band structure of wurtzite GaAs nanowires
Nanoscale ( IF 5.8 ) Pub Date : 2017-12-15 00:00:00 , DOI: 10.1039/c7nr07635e
Neimantas Vainorius _{1,

2,

3,

4} , Simon Kubitza _{1,

2,

3,

4,

5} , Sebastian Lehmann _{1,

2,

3,

4} , Lars Samuelson _{1,

2,

3,

4} , Kimberly A. Dick _{1,

2,

3,

4,

6} , Mats-Erik Pistol _{1,

2,

3,

4}

Affiliation

It has recently become possible to grow GaAs in the wurtzite crystal phase. This ability allows interesting tests of band-structure theory. Wurtzite GaAs has two closely spaced direct conduction bands as well as three nondegenerate valence bands. The energies of the band edges are not well known, in particular not as a function of temperature. In order to improve the accuracy we have studied the temperature dependence of the conduction band minimum as well as of the second valence band maximum using resonant Raman scattering (of up to 3LO Raman lines). We find that the temperature dependence of the bandgap in wurtzite GaAs is very similar to that in zinc blende GaAs. Our results show that they have the same band gaps not only at 7 K but also at room temperature to within 5 meV. This is in some discrepancy with previous work. We find that the energy difference between the first two Γ_9V and Γ_7V valence bands is constant, around 100 meV, over the investigated temperature range, 7 K to 300 K. Due to a fortuitous spacing of the energy bands we find a very unexpected and strong quadruple resonance in the resonant Raman scattering.

中文翻译：

纤锌矿GaAs纳米线的温度依赖性电子能带结构

最近已经有可能在纤锌矿晶体相中生长GaAs。此功能允许对带结构理论进行有趣的测试。纤锌矿砷化镓具有两个紧密间隔的直接导带以及三个非简并价带。带边缘的能量不是众所周知的，尤其不是温度的函数。为了提高精度，我们使用共振拉曼散射（最多3LO拉曼线）研究了导带最小值以及第二价带最大值的温度依赖性。我们发现纤锌矿型砷化镓中带隙的温度依赖性与锌掺和型砷化镓中的带隙温度非常相似。我们的结果表明，它们不仅在7 K处而且在室温至5 meV之内具有相同的带隙。这与以前的工作有所不同。在研究的温度范围（7 K至300 K）中，_9V和_Γ7V价带恒定，约为100 meV。由于能带的偶然间隔，我们在共振拉曼散射中发现了非常出乎意料的强四重共振。

更新日期：2017-12-15

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