PbI2 band gap engineering by gel incorporation†,Materials Chemistry Frontiers

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PbI2 band gap engineering by gel incorporation†
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2017-12-15 00:00:00 , DOI: 10.1039/c7qm00509a
Chong Hu _{1,

2,

3} , Tao Ye _{1,

2,

3} , Yujing Liu _{1,

2,

3} , Jie Ren _{1,

2,

3} , Xinyi Jin _{1,

2,

3} , Hongzheng Chen _{1,

2,

3} , Hanying Li _{1,

2,

3}

Affiliation

Incorporation of guest materials into semiconducting single crystalline hosts leads to the formation of semiconducting single-crystal composites. However, limited efforts have been made to comprehensively investigate the property of these potential functionalized single-crystal composites. Herein, PbI₂/gel single-crystal composites have been successfully prepared. Diffuse reflectance spectra show a clear increase in the band gap of PbI₂ after gel incorporation. The band gap is further increased through expanding the area of host/guest interfaces or enhancing the interatomic forces at the interfaces. The interatomic forces (electrostatic interaction) at the host/guest interfaces are attributed to this band gap shift. As such, this study provides a novel and facile way for band gap engineering by gel incorporation.

中文翻译：

通过凝胶掺入实现 PbI ₂带隙工程†

将客体材料掺入半导体单晶主体中导致形成半导体单晶复合材料。然而，已经作出了有限的努力来全面研究这些潜在的功能化单晶复合材料的性能。在此，已经成功地制备了PbI ₂ /凝胶单晶复合物。漫反射光谱显示PbI ₂的带隙明显增加凝胶掺入后。通过扩大宿主/客体界面的面积或增强界面处的原子间力，带隙进一步增加。主体/客体界面处的原子间力（静电相互作用）归因于该带隙位移。因此，这项研究为通过凝胶掺入的带隙工程提供了一种新颖而简便的方法。

更新日期：2017-12-15

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