Abstract The unintentional silicon incorporation during the metalorganic vapor phase epitaxy (MOVPE) of nominally undoped Al 0.7 Ga 0.3 N in a Planetary Reactor under various growth conditions was investigated. Dependent on growth temperature, pressure and V/III ratio, Si concentrations of below 1 × 10 16 up to 4 × 10 17 cm −3 were measured. Potential Si sources are discussed and, by comparing samples grown in a SiC coated reactor setup and in a TaC coated setup, the SiC coatings in the reactor are identified as the most likely source for the unintentional Si doping at elevated temperatures above 1080 °C. Under identical growth conditions the background Si concentration can be reduced by up to an order of magnitude when using TaC coatings.

中文翻译：

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在行星 MOVPE 反应器中生长的名义上未掺杂的 Al 0.7 Ga 0.3 N 中的 Si 杂质浓度

摘要 研究了在行星反应器中在不同生长条件下名义上未掺杂的 Al 0.7 Ga 0.3 N 在金属有机气相外延 (MOVPE) 过程中无意掺入的硅。根据生长温度、压力和 V/III 比，测量到低于 1 × 10 16 至高达 4 × 10 17 cm -3 的 Si 浓度。讨论了潜在的 Si 源，通过比较在 SiC 涂层反应器设置和 TaC 涂层设置中生长的样品，反应器中的 SiC 涂层被确定为在高于 1080 °C 的高温下无意 Si 掺杂的最可能来源。在相同的生长条件下，使用 TaC 涂层时，背景 Si 浓度可以降低一个数量级。