Abstract As a typical representative of all-inorganic lead halide perovskites, cesium lead bromine (CsPbBr3) has attracted significant attention in recent years. The direct band gap semiconductor CsPbBr3 has a wide band gap of 2.25 eV and high average atomic number (Cs: 55, Pb: 82 and Br: 35), which meet most of the requirements for detection of X- and γ-ray radiation, such as high attenuation, high resistivity, and significant photoconductivity response. However, the growth of large volume CsPbBr3 single crystals remains a challenge. In this paper, the synthesis of CsPbBr3 polycrystalline powders by a chemical co-precipitation method was investigated and the optimum synthesis conditions were obtained. A large CsPbBr3 single crystal of 8 mm diameter and 60 mm length was obtained by a creative electronic dynamic gradient (EDG) method. X-ray diffraction (XRD) patterns and X-ray rocking curve showed that the CsPbBr3 crystal preferentially oriented in the (1 1 0) direction and had a low dislocation density and small residual stress in the crystal. The IR and UV–Vis transmittance and temperature-dependent photoluminescence (PL) spectra showed the crystal had a good basic optical performance. The almost linear current-voltage (I-V) curves implied good ohmic contact between the electrodes and crystal surfaces. The resistivity of the crystal was calculated 109–1010 Ω cm. The above results showed that the quality of the obtained crystal had met the demand of optoelectronic applications.

中文翻译：

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钙钛矿半导体CsPbBr 3 的合成与单晶生长

摘要 作为全无机卤化铅钙钛矿的典型代表，溴化铯铅（CsPbBr3）近年来备受关注。直接带隙半导体 CsPbBr3 具有 2.25 eV 的宽带隙和高平均原子序数（Cs：55、Pb：82 和 Br：35），可满足大部分 X 射线和 γ 射线辐射的检测要求，例如高衰减、高电阻率和显着的光电导响应。然而，大体积 CsPbBr3 单晶的生长仍然是一个挑战。本文对化学共沉淀法合成CsPbBr3多晶粉体进行了研究，得到了最佳合成条件。通过创造性的电子动态梯度（EDG）方法获得了直径为 8 mm、长度为 60 mm 的大型 CsPbBr3 单晶。X射线衍射（XRD）图和X射线摇摆曲线表明，CsPbBr3晶体优先取向在（1 1 0）方向，位错密度低，晶体残余应力小。IR 和 UV-Vis 透射率和温度相关的光致发光 (PL) 光谱表明该晶体具有良好的基本光学性能。几乎线性的电流-电压 (IV) 曲线表明电极和晶体表面之间存在良好的欧姆接触。晶体的电阻率计算为 109-1010 Ω cm。以上结果表明，所得晶体的质量已满足光电应用的要求。IR 和 UV-Vis 透射率和温度相关的光致发光 (PL) 光谱表明该晶体具有良好的基本光学性能。几乎线性的电流-电压 (IV) 曲线表明电极和晶体表面之间存在良好的欧姆接触。晶体的电阻率计算为 109-1010 Ω cm。以上结果表明，所得晶体的质量已满足光电应用的要求。IR 和 UV-Vis 透射率和温度相关的光致发光 (PL) 光谱表明该晶体具有良好的基本光学性能。几乎线性的电流-电压 (IV) 曲线表明电极和晶体表面之间存在良好的欧姆接触。晶体的电阻率计算为 109-1010 Ω cm。以上结果表明，所得晶体的质量已满足光电应用的要求。