Cyano-deficient g-C₃N₄ (graphitic carbon nitride, labeled GCN) was synthesized by KOH etching treatment of bulk g-C₃N₄. Characterization results indicated that KOH etching treatment had a certain effect on the morphology and structure of GCN, and successfully introduced the cyano groups into GCN framework. The obtained KOH etching g-C₃N₄ catalysts, named ACN, exhibited the pore and/or ladder-like thin layered structure. Meanwhile, the introduction of cyano groups reduced the conduction band position of ACN, and effectively inhibited the recombination of photo-generated electron–hole pairs. In addition, ACN introduced more chemical adsorption sites to activate nitrogen, which was beneficial to the reaction of photocatalytic nitrogen fixation. The modification of morphology and electronic property, especially the introduction of cyano functional groups, remarkably promoted the activity of ACN on the simulated sunlight photocatalytic nitrogen fixation, which was 7.6-fold higher than that of GCN.

通过对块状gC ₃ N ₄进行KOH蚀刻处理，合成了缺乏氰基的gC ₃ N ₄（石墨碳氮化物，标记为GCN）。表征结果表明，KOH刻蚀处理对GCN的形貌和结构具有一定的影响，并成功地将氰基引入到GCN骨架中。所得的KOH蚀刻gC ₃ N ₄名为ACN的催化剂表现出孔和/或阶梯状的薄层结构。同时，氰基的引入降低了ACN的导带位置，并有效地抑制了光生电子-空穴对的重组。此外，乙腈还引入了更多的化学吸附位点来活化氮，这有利于光催化固氮反应。形态和电子性质的改变，尤其是氰基官能团的引入，显着提高了ACN在模拟的阳光光催化固氮上的活性，是GCN的7.6倍。