Recent Progress in Black‐Phosphorus‐Based Heterostructures for Device Applications,Small Methods

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Recent Progress in Black‐Phosphorus‐Based Heterostructures for Device Applications
Small Methods ( IF 10.7 ) Pub Date : 2017-11-27 , DOI: 10.1002/smtd.201700296
Zhibin Yang ₁ , Jianhua Hao ₁

Affiliation

The rise of 2D layered materials has inspired luxuriant research interests in the development of novel nanodevices. Thanks to van der Waals interlayer forces and being free of dangling surface bonds, 2D materials are favorable for constructing vertical heterostructures by combining materials with different features. In recent years, ultrathin black phosphorus (BP) has been rediscovered as a new member of the 2D family and is attracting significant research attention due to its outstanding electronic properties and tunable bandgaps, which offers a new avenue for the creation of novel 2D heterostructures. Here, the recent development of heterostructured architectures based on 2D BP nanosheets is summarized with an emphasis on device characterizations. Stacks of phosphorene with graphene, semiconductors, or insulators are reviewed, along with methods to characterize the corresponding proof‐of‐concept devices, as well as potential opportunities for applications in the 2D limit, including transistors, optoelectronic devices, and sensors, with unprecedented functionalities. Finally, the challenges ahead of BP heterostructures are discussed and some future outlooks are suggested.

中文翻译：

基于黑磷的异质结构在器件应用中的最新进展

二维分层材料的兴起激发了人们对新型纳米器件开发的浓厚研究兴趣。得益于范德华层间力，并且没有悬空的表面键，二维材料通过组合具有不同特征的材料，有利于构造垂直异质结构。近年来，超薄黑磷（BP）被重新发现为2D家族的新成员，并且由于其出色的电子性能和可调节的带隙而引起了广泛的研究关注，这为创建新颖的2D异质结构提供了新途径。在此，总结了基于2D BP纳米片的异质结构的最新发展，重点是器件表征。审查了磷光体与石墨烯，半导体或绝缘体的堆叠情况，以及表征相应概念验证设备的方法以及2D极限应用的潜在机会，包括具有前所未有功能的晶体管，光电设备和传感器。最后，讨论了BP异质结构之前的挑战，并提出了一些未来展望。

更新日期：2017-11-27

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