The need for energy efficiency and lower emissions from industrial plants and infrastructures is driving research into novel sensor technologies, especially those that allow observing and measuring greenhouse gases, such as ${\mathrm{CO}}_2$. ${\mathrm{CO}}_2$ emissions can be captured using mid-infrared imagers, but at present, these are based on hybrid technologies that need expensive manufacturing and require cooling. The high price tag prevents a wider diffusion of mid-infrared imagers and hence their use for many low-cost and large-volume applications. Here we report a monolithic III-V technology that integrates GaAs transistors with an InSb photodiode array. The monolithic material system reduces costs and provides an excellent platform for the sensor system-on-chip. We present a focal plane array imaging technology operating at room temperature in the 3–6 μm wavelength range that will address the need for identification and measurement of a range of industrially important gases.

中文翻译：

---

单芯片，中红外阵列，用于室温视频速率成像

对能源效率的要求以及来自工厂和基础设施的较低排放量正在推动对新型传感器技术的研究，特别是那些允许观测和测量温室气体的传感器技术，例如 ${\mathrm{一氧化碳}}_{\mathrm{2个}}$。 ${\mathrm{一氧化碳}}_{\mathrm{2个}}$可以使用中红外成像仪捕获排放物，但是目前，这些是基于需要昂贵制造并需要冷却的混合技术。高价位的标签阻止了中红外成像器的广泛传播，因此阻止了它们在许多低成本和大批量应用中的使用。在这里，我们报告了一种单片III-V技术，该技术将GaAs晶体管与InSb光电二极管阵列集成在一起。单片材料系统降低了成本，并为片上传感器系统提供了出色的平台。我们介绍了一种焦平面阵列成像技术，该技术在室温下在3–6μm波长范围内运行，可满足识别和测量一系列重要工业气体的需求。