Liquid phase crystallization using line‐shaped energy sources such as CW‐diode lasers or electron beams has proven to form mc‐Si layers on borosilicate or borosilicate/aluminosilicate glass that exhibit wafer equivalent grain sizes and electronic quality. In this work, we characterize the impact of the employed dielectric interlayer stack sandwiched between glass and absorber on the electronic quality. For this purpose, we investigate a large variety of test cell results achieved in the past on different interlayer stacks composed of silicon oxide, silicon nitride as well as silicon oxynitride deposited by means of plasma enhanced chemical vapour deposition or plasma oxidation and employ i(v), SunsVoc, quantum efficiency measurements, and photoluminescence imaging to assess the electronic properties of the crystallized absorbers. The results are compared with state‐of the art interdigitated back‐contact cells and literature values. Based on these findings, we conclude that at the present state of interlayer , the bulk quality imposes the limits in cell efficiency and investigates potential approaches to increase the bulk quality of LPC‐Si absorbers.

中文翻译：

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前体层组成和沉积工艺对液相结晶硅吸收剂电子质量的影响

事实证明，使用线形能源（例如CW二极管激光器或电子束）进行液相结晶可在硼硅酸盐或硼硅酸盐/铝硅酸盐玻璃上形成mc-Si层，这些层具有与晶圆相当的晶粒尺寸和电子质量。在这项工作中，我们表征了夹在玻璃和吸收体之间的所采用的介电中间层堆叠对电子质量的影响。为此，我们研究了过去在由氧化硅，氮化硅以及氮氧化硅组成的不同中间层堆叠上通过等离子体增强化学气相沉积或等离子体氧化沉积的各种测试电池结果，并采用i（v ），SunsVoc，量子效率测量和光致发光成像来评估结晶吸收剂的电子性能。将结果与最先进的交叉指背接触单元和文献数据进行比较。根据这些发现，我们得出结论，在中间层的当前状态下，整体质量对电池效率施加了限制，并研究了提高LPC-Si吸收体整体质量的潜在方法。