Heterointerface recombination of Cu(In,Ga)(S,Se)2‐based solar cells with different buffer layers,Progress in Photovoltaics

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Heterointerface recombination of Cu(In,Ga)(S,Se)2‐based solar cells with different buffer layers
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2017-11-03 , DOI: 10.1002/pip.2952
Jakapan Chantana ₁ , Takuya Kato ₂ , Hiroki Sugimoto ₂ , Takashi Minemoto ₁

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Cu(In,Ga)(S,Se)₂ solar cell is high conversion efficiency (η) thin‐film solar cell. One of the methods to further increase the η is to replace traditional CdS/ZnO buffer layers by more transparent materials to enhance carrier generation in spectral region from 330 to 550 nm. Cd_0.75Zn_0.25S/ZnO, thin CdS/ZnS(O,OH)/ZnO, and thin CdS/ZnS(O,OH)/Zn_0.79Mg_0.21O buffer layers are therefore developed to replace the traditional CdS/ZnO buffer layers in Cu(In,Ga)(S,Se)₂‐based solar cells. ZnO, Zn_0.79Mg_0.21O, and ZnO:Al are prepared by sputtering method. Low‐surface carrier recombination, caused by low sputtering damage, is observed in the solar cells with CdS/ZnO or Cd_0.75Zn_0.25S/ZnO buffer layers, while the highest surface carrier recombination is presented in the solar cell with ZnS(O,OH)/ZnO buffer layer. Therefore, thin CdS/ZnS(O,OH)/ZnO or Zn_0.79Mg_0.21O buffer layers are applied in the solar cells to decrease surface recombination (reduced sputtering damage). Ultimately, conversion efficiencies of the solar cells with Cd_0.75Zn_0.25S/ZnO, thin CdS/ZnS(O,OH)/ZnO, and thin CdS/ZnS(O,OH)/Zn_0.79Mg_0.21O buffer layers are enhanced to 19.61, 18.60, and 18.81%, respectively, which are higher than that of 18.32% for the solar cell with the traditional CdS/ZnO buffer layers.

中文翻译：

具有不同缓冲层的基于Cu（In，Ga）（S，Se）2的太阳能电池的异质界面重组

Cu（In，Ga）（S，Se）₂太阳能电池是高转换效率（η）薄膜太阳能电池。进一步增加η的方法之一是用更透明的材料代替传统的CdS / ZnO缓冲层，以增强330至550 nm光谱范围内载流子的产生。因此，开发了Cd _0.75 Zn _0.25 S / ZnO，薄CdS / ZnS（O，OH）/ ZnO和薄CdS / ZnS（O，OH）/ Zn _0.79 Mg _0.21 O缓冲层来代替传统的CdS / ZnO缓冲层在基于Cu（In，Ga）（S，Se）₂的太阳能电池中 ZnO，Zn _0.79 Mg _0.21O和ZnO：Al通过溅射法制备。在具有CdS / ZnO或Cd _0.75 Zn _0.25 S / ZnO缓冲层的太阳能电池中观察到由低溅射损伤引起的低表面载流子复合，而在具有ZnS（O， OH）/ ZnO缓冲层。因此，将薄CdS / ZnS（O，OH）/ ZnO或Zn _0.79 Mg _0.21 O缓冲层应用于太阳能电池中，以减少表面复合（减少溅射损伤）。最终，Cd _0.75 Zn _0.25 S / ZnO，稀CdS / ZnS（O，OH）/ ZnO和稀CdS / ZnS（O，OH）/ Zn _0.79 Mg _0.21的太阳能电池的转换效率O缓冲层分别提高到19.61％，18.60％和18.81％，高于具有传统CdS / ZnO缓冲层的太阳能电池的18.32％。

更新日期：2017-11-03

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