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Effect of KF absorber treatment on the functionality of different transparent conductive oxide layers in CIGSe solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2017-08-16 , DOI: 10.1002/pip.2925 Jan Keller 1 , Francis Chalvet 2 , Jonathan Joel 2 , Asim Aijaz 1 , Tomas Kubart 1 , Lars Riekehr 1 , Marika Edoff 1 , Lars Stolt 1, 2 , Tobias Törndahl 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2017-08-16 , DOI: 10.1002/pip.2925 Jan Keller 1 , Francis Chalvet 2 , Jonathan Joel 2 , Asim Aijaz 1 , Tomas Kubart 1 , Lars Riekehr 1 , Marika Edoff 1 , Lars Stolt 1, 2 , Tobias Törndahl 1
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This contribution studies the impact of the KF‐induced Cu(In,Ga)Se2 (CIGSe) absorber modification on the suitability of different transparent conductive oxide (TCO) layers in solar cells. The TCO material was varied between ZnO:Al (AZO), ZnO:B (BZO), and In2O3:H (IOH). It is shown that the thermal stress needed for optimized TCO properties can establish a transport barrier for charge carriers, which results in severe losses in fill factor (FF) for temperatures >150°C. The FF losses are accompanied by a reduction in open circuit voltage (Voc) that might originate from a decreased apparent doping density (Nd,app) after annealing. Thermally activated redistributions of K and Na in the vicinity of the CdS/(Cu,K)‐In‐Se interface are suggested to be the reason for the observed degradation in solar cell performance. The highest efficiency was measured for a solar cell where the absorber surface modification was removed and a BZO TCO layer was deposited at a temperature of 165°C. The presented results highlight the importance of well‐designed TCO and buffer layer processes for CIGSe solar cells when a KF post deposition treatment (KF‐PDT) was applied.
中文翻译：
KF吸收剂处理对CIGSe太阳能电池中不同透明导电氧化物层功能的影响
该贡献研究了KF诱导的Cu（In，Ga）Se 2（CIGSe）吸收剂改性对太阳能电池中不同透明导电氧化物（TCO）层的适用性的影响。TCO材料在ZnO：Al（AZO），ZnO：B（BZO）和In 2 O 3：H（IOH）之间变化。结果表明，优化的TCO性能所需的热应力可以为电荷载流子建立传输势垒，从而导致温度> 150°C时填充系数（FF）的严重损失。所述FF的损失，伴随有开路电压（减少V OC）可能起源从降低的表观掺杂密度（Ñ d，应用）退火后。建议在CdS /（Cu，K）-In-Se界面附近进行K和Na的热活化重新分布，这是观察到的太阳能电池性能下降的原因。对于去除了吸收体表面改性并在165°C的温度下沉积BZO TCO层的太阳能电池，测量出最高效率。提出的结果强调了采用KF沉积后处理（KF-PDT）时，精心设计的TCO和缓冲层工艺对于CIGSe太阳能电池的重要性。
更新日期：2017-08-16
中文翻译：
KF吸收剂处理对CIGSe太阳能电池中不同透明导电氧化物层功能的影响
该贡献研究了KF诱导的Cu（In，Ga）Se 2（CIGSe）吸收剂改性对太阳能电池中不同透明导电氧化物（TCO）层的适用性的影响。TCO材料在ZnO：Al（AZO），ZnO：B（BZO）和In 2 O 3：H（IOH）之间变化。结果表明，优化的TCO性能所需的热应力可以为电荷载流子建立传输势垒，从而导致温度> 150°C时填充系数（FF）的严重损失。所述FF的损失，伴随有开路电压（减少V OC）可能起源从降低的表观掺杂密度（Ñ d，应用）退火后。建议在CdS /（Cu，K）-In-Se界面附近进行K和Na的热活化重新分布，这是观察到的太阳能电池性能下降的原因。对于去除了吸收体表面改性并在165°C的温度下沉积BZO TCO层的太阳能电池，测量出最高效率。提出的结果强调了采用KF沉积后处理（KF-PDT）时，精心设计的TCO和缓冲层工艺对于CIGSe太阳能电池的重要性。
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