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Proton irradiation of CdTe thin film photovoltaics deposited on cerium‐doped space glass
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2017-08-02 , DOI: 10.1002/pip.2923 Dan A. Lamb 1 , Craig I. Underwood 2 , Vincent Barrioz 3 , Russell Gwilliam 4 , James Hall 5 , Mark A. Baker 2 , Stuart J.C. Irvine 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2017-08-02 , DOI: 10.1002/pip.2923 Dan A. Lamb 1 , Craig I. Underwood 2 , Vincent Barrioz 3 , Russell Gwilliam 4 , James Hall 5 , Mark A. Baker 2 , Stuart J.C. Irvine 1
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Space photovoltaics is dominated by multi‐junction (III‐V) technology. However, emerging applications will require solar arrays with high specific power (kW/kg), flexibility in stowage and deployment, and a significantly lower cost than the current III‐V technology offers. This research demonstrates direct deposition of thin film CdTe onto the radiation‐hard cover glass that is normally laminated to any solar cell deployed in space. Four CdTe samples, with 9 defined contact device areas of 0.25 cm2, were irradiated with protons of 0.5‐MeV energy and varying fluences. At the lowest fluence, 1 × 1012 cm−2, the relative efficiency of the solar cells was 95%. Increasing the proton fluence to 1 × 1013 cm−2 and then 1 × 1014 cm−2 decreased the solar cell efficiency to 82% and 4%, respectively. At the fluence of 1 × 1013 cm−2, carrier concentration was reduced by an order of magnitude. Solar Cell Capacitance Simulator (SCAPS) modelling obtained a good fit from a reduction in shallow acceptor concentration with no change in the deep trap defect concentration. The more highly irradiated devices resulted in a buried junction characteristic of the external quantum efficiency, indicating further deterioration of the acceptor doping. This is explained by compensation from interstitial H+ formed by the proton absorption. An anneal of the 1 × 1014 cm−2 fluence devices gave an efficiency increase from 4% to 73% of the pre‐irradiated levels, indicating that the compensation was reversible. CdTe with its rapid recovery through annealing demonstrates a radiation hardness to protons that is far superior to conventional multi‐junction III‐V solar cells.
中文翻译：
铈掺杂太空玻璃上沉积的CdTe薄膜光伏电池的质子辐照
太空光伏技术以多结（III-V）技术为主导。但是，新兴的应用将需要具有高比功率（kW / kg），在积载和部署中具有灵活性以及比目前的III-V技术所提供的成本低得多的太阳能电池板。这项研究表明，将CdTe薄膜直接沉积在防辐射的覆盖玻璃上，该玻璃通常层压在空间中部署的任何太阳能电池上。用0.5MeV能量的质子和不同的通量辐照了四个具有9个定义的0.25 cm 2的接触器件区域的CdTe样品。在最低通量为1×10 12 cm -2时，太阳能电池的相对效率为95％。将质子通量增加到1×10 13 cm -2然后1×10 14 cm -2将太阳能电池效率分别降低至82％和4％。在1×10 13 cm -2的注量下，载流子浓度降低了一个数量级。太阳能电池电容模拟器（SCAPS）建模通过减少浅受体浓度而没有改变深陷阱缺陷浓度而获得了很好的拟合度。受到更高辐射的器件导致了外部量子效率的掩埋结特性，表明受体掺杂的进一步恶化。这可以通过质子吸收形成的间隙H +的补偿来解释。1×10 14 cm -2的退火能量密度装置使效率从预辐照水平的4％提高到73％，表明补偿是可逆的。CdTe可以通过退火快速恢复，对质子的辐射硬度远远优于传统的多结III-V太阳能电池。
更新日期：2017-08-02
中文翻译：
铈掺杂太空玻璃上沉积的CdTe薄膜光伏电池的质子辐照
太空光伏技术以多结（III-V）技术为主导。但是，新兴的应用将需要具有高比功率（kW / kg），在积载和部署中具有灵活性以及比目前的III-V技术所提供的成本低得多的太阳能电池板。这项研究表明，将CdTe薄膜直接沉积在防辐射的覆盖玻璃上，该玻璃通常层压在空间中部署的任何太阳能电池上。用0.5MeV能量的质子和不同的通量辐照了四个具有9个定义的0.25 cm 2的接触器件区域的CdTe样品。在最低通量为1×10 12 cm -2时，太阳能电池的相对效率为95％。将质子通量增加到1×10 13 cm -2然后1×10 14 cm -2将太阳能电池效率分别降低至82％和4％。在1×10 13 cm -2的注量下，载流子浓度降低了一个数量级。太阳能电池电容模拟器（SCAPS）建模通过减少浅受体浓度而没有改变深陷阱缺陷浓度而获得了很好的拟合度。受到更高辐射的器件导致了外部量子效率的掩埋结特性，表明受体掺杂的进一步恶化。这可以通过质子吸收形成的间隙H +的补偿来解释。1×10 14 cm -2的退火能量密度装置使效率从预辐照水平的4％提高到73％，表明补偿是可逆的。CdTe可以通过退火快速恢复，对质子的辐射硬度远远优于传统的多结III-V太阳能电池。
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