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AlSb intermetallic semiconductor compound formation by solid state reaction after partial amorphization induced by mechanical alloying
Intermetallics ( IF 4.3 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.intermet.2017.11.002
Florin Popa , Ionel Chicinas , Olivier Isnard

Abstract The formation of AlSb intermetallic semiconductor by solid state reaction has been studied as a function of milling time. As revealed by X-ray diffraction study, the formation reaction is a complex phase change, involving successively crystalline, amorphous and crystalline and finally crystalline state. The amount of amorphous phase was quantified. Depending on milling time, a disorder parameter was computed and its role on AlSb formation is discussed. Upon milling time, short-range order was evidenced and distance characteristic of Al Al and Al Sb pairs was evidenced. Morphological evolution during the formation process is presented. Semiconductor behavior was evidenced by electrical resistivity measurements and the conduction activation energy was computed.

中文翻译:

机械合金化诱导部分非晶化后固态反应形成AlSb金属间半导体化合物

摘要 研究了通过固态反应形成 AlSb 金属间化合物半导体与研磨时间的关系。X射线衍射研究表明,形成反应是一个复杂的相变,依次涉及结晶、非晶和结晶,最后是结晶状态。定量非晶相的量。根据研磨时间,计算无序参数并讨论其对 AlSb 形成的作用。在铣削时间后,证明了短程有序,并且证明了 Al Al 和 Al Sb 对的距离特征。介绍了形成过程中的形态演变。半导体行为由电阻率测量证明,并计算传导激活能。
更新日期:2018-02-01
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