Abstract An overview of the important defect types, their origins and interactions during the bulk crystal growth from the melt and selected epitaxial processes is given. The equilibrium and nonequilibrium thermodynamics, kinetics and interaction principles are considered as driving forces of defect generation, incorporation and assembling. Results of modeling and practical in situ control are presented. Strong emphasis is given to semiconductor crystal growth since it is from this class of materials that most has been first learned, the resulting knowledge then having been applied to other classes of material. The treatment starts with melt-structure considerations and zero-dimensional defect types, i.e. native and extrinsic point defects. Their generation and incorporation mechanisms are discussed. Micro- and macro-segregation phenomena – striations and the effect of constitutional supercooling – are added. Dislocations and their patterning are discussed next. The role of high-temperature dislocation dynamics for collective interactions, like cell structuring and bunching, is specified. Additionally, some features of epitaxial dislocation kinetics and engineering are illustrated. Next the grain boundary formation mechanisms, such as dynamic polygonization and interface instabilities, are discussed. The interplay between facets, inhomogeneous dopant incorporations and twinning is shown. Finally, second phase precipitation and inclusion trapping are discussed. The importance of in situ stoichiometry control is underlined. Generally, selected measures of defect engineering are given at the end of each sub-chapter.

中文翻译：

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缺陷的基础和工程

摘要 概述了熔体和选定的外延过程中大块晶体生长过程中的重要缺陷类型、它们的起源和相互作用。平衡和非平衡热力学、动力学和相互作用原理被认为是缺陷产生、结合和组装的驱动力。介绍了建模和实际现场控制的结果。非常强调半导体晶体的生长，因为大多数人首先从这类材料中学到知识，然后将所得知识应用于其他类别的材料。处理从熔体结构考虑和零维缺陷类型开始，即本征和外在点缺陷。讨论了它们的生成和合并机制。添加了微观和宏观偏析现象——条纹和结构过冷效应。接下来讨论位错及其模式。规定了高温位错动力学在集体相互作用中的作用，如细胞结构和聚束。此外，还说明了外延位错动力学和工程的一些特征。接下来讨论晶界形成机制，例如动态多边形化和界面不稳定性。显示了小平面、不均匀掺杂剂掺入和孪晶之间的相互作用。最后，讨论了第二相析出和夹杂物捕获。强调了原位化学计量控制的重要性。通常，在每个子章的末尾给出了缺陷工程的选定措施。