Abstract Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field strength, making it especially attractive for high-power and high-temperature devices. Recent development of SiC devices relies on rapid progress in bulk and epitaxial growth technology of high-quality SiC crystals. At present, the standard technique for SiC bulk growth is the seeded sublimation method. In spite of difficulties in the growth at very high temperature above 2300 °C, 150-mm-diameter SiC wafers are currently produced. Through extensive growth simulation studies and minimizing thermal stress during sublimation growth, the dislocation density of SiC wafers has been reduced to 3000–5000 cm−2 or lower. Homoepitaxial growth of SiC by chemical vapor deposition has shown remarkable progress, with polytype replication and wide range control of doping densities (1014–1019 cm−3) in both n- and p-type materials, which was achieved using step-flow growth and controlling the C/Si ratio, respectively. Types and structures of major extended and point defects in SiC epitaxial layers have been investigated, and basic phenomena of defect generation and reduction during SiC epitaxy have been clarified. In this paper, the fundamental aspects and technological developments involved in SiC bulk and homoepitaxial growth are reviewed.

中文翻译：

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碳化硅的体生长和外延生长

摘要 碳化硅（SiC）是一种宽带隙半导体，具有很高的临界电场强度，特别适用于大功率和高温器件。SiC 器件的最新发展依赖于高质量 SiC 晶体的块体和外延生长技术的快速进步。目前，SiC 块体生长的标准技术是种子升华法。尽管在 2300 °C 以上的极高温度下生长存在困难，但目前可以生产 150 毫米直径的 SiC 晶片。通过广泛的生长模拟研究和最小化升华生长过程中的热应力，SiC 晶片的位错密度已降低到 3000-5000 cm-2 或更低。通过化学气相沉积的 SiC 同质外延生长取得了显着进展，在 n 型和 p 型材料中具有多型复制和广泛的掺杂密度（1014-1019 cm-3）控制，这是分别使用阶梯流生长和控制 C/Si 比来实现的。研究了 SiC 外延层中主要延伸缺陷和点缺陷的类型和结构，阐明了 SiC 外延过程中缺陷产生和减少的基本现象。在本文中，回顾了 SiC 块体和同质外延生长所涉及的基本方面和技术发展。并阐明了 SiC 外延过程中缺陷产生和减少的基本现象。在本文中，回顾了 SiC 块体和同质外延生长所涉及的基本方面和技术发展。并阐明了 SiC 外延过程中缺陷产生和减少的基本现象。在本文中，回顾了 SiC 块体和同质外延生长所涉及的基本方面和技术发展。