Abstract In this work, the AC admittance and conductance of non-polar SiOx-based resistive switching memory devices is measured as a function of temperature to investigate charge transport and potential switching mechanisms. After electroforming using a forward/backward voltage scan, devices were measured over the frequency range of 1 k–1 MHz and the temperature range of 200–400 K. For temperature (T) > 300 K, AC conductance follows σ(ω) = Aωs, where s is linearly dependent on temperature and close to, but less than, unity. For T

中文翻译：

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基于 SiOx 的电阻开关存储器中的质子交换反应：阻抗谱的回顾和见解

摘要 在这项工作中，测量非极性 SiOx 基电阻开关存储器件的交流导纳和电导作为温度的函数，以研究电荷传输和电位开关机制。使用正向/反向电压扫描进行电铸后，在 1 k–1 MHz 的频率范围和 200–400 K 的温度范围内测量器件。对于温度 (T) > 300 K，交流电导遵循 σ(ω) = Aωs，其中 s 与温度呈线性关系，接近但小于 1。对于 T