Abstract Large size growth of Zinc(tris) thiourea sulphate (ZTS) crystals has been successfully done through slow solvent evaporation technique in presence of l -Ascorbic acid (LAA). The possibility of any extra phase due to presence of LAA was ruled out through structural analysis. The deviation in lattice parameters and shift in peaks position indicates the interaction of LAA with ZTS. Crystalline perfection of grown crystals was judged by High-resolution X-ray diffraction (HRXRD) study and found that the crystalline perfection of ZTS in presence of 10 wt% LAA is enhanced compared to others. The low optical absorbance and high band gap confirms its application in optoelectronic devices. A burly blue emission band at 460 nm was observed in Photoluminescence spectra of ZTS crystals grown in presence of LAA when excited at 310 and 358 nm both. However, when these specimens were excited at 385 nm this blue emission band is observed at 470 nm. The remarkable enhancement of blue band emission intensity was noted which may be attributed due to presence of defects (color centers). Further the dielectric measurement was done and shows that the dielectric constant has been improved due to presence of LAA. The enhanced optical band gap, photoluminescence intensity and dielectric constant suggests that the LAAZTS single crystals are suitable for electro-optic device applications.

中文翻译：

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L-抗坏血酸对硫酸锌（三）硫脲 (ZTS) 单晶的晶体形态、结构、结晶完美度、光学、光致发光和介电性能的显着影响

摘要 在 l-抗坏血酸 (LAA) 存在下，通过缓慢溶剂蒸发技术成功地实现了硫酸锌 (三) 硫脲 (ZTS) 晶体的大尺寸生长。通过结构分析排除了由于 LAA 存在而产生任何额外相的可能性。晶格参数的偏差和峰位置的偏移表明 LAA 与 ZTS 的相互作用。通过高分辨率 X 射线衍射 (HRXRD) 研究判断生长晶体的晶体完美度，发现在 10 wt% LAA 存在下 ZTS 的晶体完美度与其他晶体相比有所提高。低吸光度和高带隙证实了其在光电器件中的应用。当在 310 和 358 nm 激发时，在 LAA 存在下生长的 ZTS 晶体的光致发光光谱中观察到 460 nm 处的粗壮蓝色发射带。然而，当这些样品在 385 nm 处被激发时，在 470 nm 处观察到此蓝色发射带。注意到蓝带发射强度的显着增强，这可能归因于缺陷（色心）的存在。此外，还进行了介电测量，结果表明由于 LAA 的存在，介电常数得到了改善。增强的光学带隙、光致发光强度和介电常数表明 LAAZTS 单晶适用于电光器件应用。此外，还进行了介电测量，结果表明由于 LAA 的存在，介电常数得到了改善。增强的光学带隙、光致发光强度和介电常数表明 LAAZTS 单晶适用于电光器件应用。此外，还进行了介电测量，结果表明由于 LAA 的存在，介电常数得到了改善。增强的光学带隙、光致发光强度和介电常数表明 LAAZTS 单晶适用于电光器件应用。