Dense Carbon Nanotube Films as Transparent Electrodes in Low‐Voltage Polymer and All‐Carbon Transistors,Advanced Electronic Materials

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Dense Carbon Nanotube Films as Transparent Electrodes in Low‐Voltage Polymer and All‐Carbon Transistors
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-12-11 , DOI: 10.1002/aelm.201700331
Martin Held ₁ , Patrik Laiho ₂ , Antti Kaskela ₂ , Florentina Gannott ₃ , Marcel Rother ₁ , Esko Kauppinen ₂ , Jana Zaumseil ₁

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Dense but transparent films of long and clean carbon nanotubes grown by the floating catalyst method, transferred and patterned on glass substrates, are employed as source and drain electrodes in top‐gate field‐effect transistors with both low‐mobility semiconducting polymers and high‐mobility networks of polymer‐sorted semiconducting single‐walled carbon nanotubes. Significant enhancement of ambipolar charge injection into the polymer semiconductor compared to gold electrodes is observed, while the limitations of sheet resistance become apparent for the high‐mobility nanotube transistors. The injection of charges from gold compared to carbon nanotube electrodes into the semiconducting nanotube network is investigated by means of conductive atomic force microscopy indicating a less defined channel edge for the latter. Metal‐free, all‐carbon electrolyte‐gated transistors with a nanotube network semiconductor as well as nanotube source, drain, and gate electrodes show both hole and electron transport at very low operating voltages.

中文翻译：

低压聚合物和全碳晶体管中的致密碳纳米管薄膜作为透明电极

通过浮动催化剂方法生长的长而干净的碳纳米管的致密但透明的膜，在玻璃基板上转移并构图，用作具有低迁移率半导体聚合物和高迁移率的顶栅场效应晶体管的源极和漏极。聚合物分类的半导体单壁碳纳米管的网络。与金电极相比，观察到聚合物半导体中双极性电荷注入的显着增强，而高迁移率纳米管晶体管的薄层电阻限制变得明显。与碳纳米管电极相比，从金中注入电荷到半导体纳米管网络中的方法是通过导电原子力显微镜检查的，这表明后者的通道边缘定义不明确。无金属

更新日期：2017-12-11

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