Recently, both lateral and vertical p–n junctions have been realized in 2D materials using various strategies, with a number of works on exploring the potential of lateral heterojunctions resulting from thickness‐modulated bandgaps at the interface. Here, electrically tunable all‐black‐phosphorus (BP) lateral heterojunction diodes, without the need of split‐gating or selective chemical doping or transfer‐based vertical stacking, are experimentally demonstrated. The BP heterojunction diode, which exhibits an ultralow off‐state current density of 8 pA µm⁻¹ at a mere V_d of 100 mV and a significant gate‐tunable current‐rectifying behavior with the highest rectification ratio exceeding 600, is able to harvest solar energy at both visible and near‐infrared wavelengths beyond the bandgap limitation of transition metal dichalcogenides. Specifically, at 660 nm, the device achieves an open‐circuit voltage (V_oc) of 210 mV and a short‐circuit current (I_sc) of 1.5 nA at 3.6 W cm⁻² power density, resulting in an external quantum efficiency of 7.4% which outperforms both split‐gating and chemically doped homojunctions. This work paves the way for the exploitation of BP lateral heterojunction for broadband energy harvesting towards future optoelectronic applications.

中文翻译：

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电可调侧向黑色磷异质结二极管中的明显光伏效应

最近，使用各种策略在2D材料中实现了横向和纵向p–n结，并开展了许多工作来探索由于界面处的厚度调制带隙而产生的横向异质结的潜力。在此，通过实验证明了可电调谐的全黑磷（BP）横向异质结二极管，无需分栅或选择性化学掺杂或基于转移的垂直堆叠。BP异质结二极管，仅在V _d时具有8 pA µm ^-1的超低关态电流密度100 mV的电流和显着的栅极可调电流整流性能，最高整流比超过600，能够在可见光和近红外波长范围内（超过过渡金属二卤化物的带隙限制）收集太阳能。具体而言，在660 nm处，该器件在3.6 W cm ^-2的功率密度下达到210 mV的开路电压（V _oc）和1.5 nA的短路电流（I _sc），从而导致外部量子效率为7.4％的性能优于分栅和化学掺杂的同质结。这项工作为利用BP横向异质结为未来的光电应用开发宽带能量收集铺平了道路。