Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction,ACS Energy Letters

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Tantalum Oxide Electron-Selective Heterocontacts for Silicon Photovoltaics and Photoelectrochemical Water Reduction
ACS Energy Letters ( IF 19.3 ) Pub Date : 2017-12-08 00:00:00 , DOI: 10.1021/acsenergylett.7b01153
Yimao Wan _{1,

2,

3} , Siva Krishna Karuturi ₄ , Christian Samundsett ₁ , James Bullock _{2,

3} , Mark Hettick _{2,

3} , Di Yan ₁ , Jun Peng ₁ , Parvathala Reddy Narangari ₄ , Sudha Mokkapati ₅ , Hark Hoe Tan ₄ , Chennupati Jagadish ₄ , Ali Javey _{2,

3} , Andres Cuevas ₁

Affiliation

Crystalline silicon (c-Si) solar cells have been dominating the photovoltaic (PV) market for decades, and c-Si based photoelectrochemical (PEC) cells are regarded as one of the most promising routes for water splitting and renewable production of hydrogen. In this work, we demonstrate a nanoscale tantalum oxide (TaO_x, ∼6 nm) as an electron-selective heterocontact, simultaneously providing high-quality passivation to the silicon surface and effective transport of electrons to either an external circuit or a water-splitting catalyst. The PV application of TaO_x is demonstrated by a proof-of-concept device having a conversion efficiency of 19.1%. In addition, the PEC application is demonstrated by a photon-to-current efficiency (with additional applied bias) of 7.7%. These results represent a 2% and 3.8% absolute enhancement over control devices without a TaO_x interlayer, respectively. The methods presented in this Letter are not limited to c-Si based devices and can be viewed as a more general approach to the interface engineering of optoelectronic and photoelectrochemical applications.

中文翻译：

用于硅光伏和光电化学减水的氧化钽电子选择性异质接触

数十年来，晶体硅（c-Si）太阳能电池一直主导着光伏（PV）市场，而基于c-Si的光电化学（PEC）电池被视为水分解和氢可再生生产的最有希望的途径之一。在这项工作中，我们展示了纳米级氧化钽（TaO _x，〜6 nm）作为电子选择性异质接触，同时提供了对硅表面的高质量钝化以及有效地将电子传输到外部电路或水分解的能力。催化剂。TaO _x的光伏应用通过具有19.1％转换效率的概念验证设备证明了这一点。此外，PEC应用的光子电流效率（带有附加的施加偏置）为7.7％。这些结果分别表示与没有TaO _x夹层的控制设备相比，绝对值提高了2％和3.8％。本信中介绍的方法不仅限于基于c-Si的器件，并且可以看作是光电和光电化学应用界面工程的一种更通用的方法。

更新日期：2017-12-08

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