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Growth method for A III B V and A IV B VI heterostructures
Journal of Crystal Growth ( IF 1.8 ) Pub Date : 2018-02-01 , DOI: 10.1016/j.jcrysgro.2017.12.013
I.V. Fedorchenko , A.R. Kushkov , D.S. Gaev , O.I. Rabinovich , S.F. Marenkin , S.I. Didenko , S.A. Legotin , M.N. Orlova , A.A. Krasnov

Abstract The results of nanoscale islet films grown by AIIIBV and AIVBVI incongruent evaporation compounds are discussed. The surface morphology structure was studied by atomic-force microscopy. It is shown that the distribution density and the characteristic dimensions of nanostructures depend on the evaporation temperature.

中文翻译:

A III BV 和 A IV B VI 异质结构的生长方法

摘要 讨论了由 AIIIBV 和 AIVBVI 不一致蒸发化合物生长的纳米级胰岛膜的结果。通过原子力显微镜研究表面形貌结构。结果表明,纳米结构的分布密度和特征尺寸取决于蒸发温度。
更新日期:2018-02-01
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