Abstract Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. Currently, Travelling Molten Zone (TMZ) technique is widely used for growth of semiconductor-grade TlBr crystals. However, there are several challenges associated with this type of crystal growth process including lower yield, high thermal stress, and low crystal uniformity. To overcome these shortcomings of the current technique, several different crystal growth techniques have been implemented in this study. These include: Vertical Bridgman (VB), Physical Vapor Transport (PVT), Edge-defined Film-fed Growth (EFG), and Czochralski Growth (Cz). Techniques based on melt pulling (EFG and Cz) were demonstrated for the first time for semiconductor grade TlBr material. The viability of each process along with the associated challenges for TlBr growth has been discussed. The purity of the TlBr crystals along with its crystalline and electronic properties were analyzed and correlated with the growth techniques. Uncorrected 662 keV energy resolutions around 2% were obtained from 5 mm x 5 mm x 10 mm TlBr devices with virtual Frisch-grid configuration.

中文翻译：

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溴化铊半导体辐射探测器的先进晶体生长技术

摘要 溴化铊 (TlBr) 是一种很有前途的室温辐射探测器候选物，具有优异的电荷传输特性。目前，移动熔融区 (TMZ) 技术广泛用于半导体级 TlBr 晶体的生长。然而，这种类型的晶体生长过程存在一些挑战，包括低产量、高热应力和低晶体均匀性。为了克服当前技术的这些缺点，本研究中采用了几种不同的晶体生长技术。这些包括：垂直布里奇曼 (VB)、物理蒸汽传输 (PVT)、边缘限定薄膜生长 (EFG) 和直拉生长 (Cz)。首次展示了基于熔体拉伸（EFG 和 Cz）的技术用于半导体级 TlBr 材料。讨论了每种工艺的可行性以及 TlBr 生长的相关挑战。分析了 TlBr 晶体的纯度及其结晶和电子特性，并将其与生长技术相关联。从具有虚拟弗里施网格配置的 5 mm x 5 mm x 10 mm TlBr 设备获得约 2% 的未校正 662 keV 能量分辨率。