Abstract The accelerated crucible rotation technique (ACRT) was introduced in the traveling heater method (THM) growth process of detector-grade CdZnTe (CZT) crystals to regulate the convection in the melt and to modify the growth interface morphology. Several ingots with the diameter of 53 mm were grown by THM with/without ACRT. The ingots were quenched during the growth to show both macroscopic and microscopic morphologies of the growth interfaces. The results show that by using ACRT the growth interface can be changed from a concave one to the flat or even convex one depending on the ACRT parameters, which is favorable for reducing nucleation in the melt to get larger CZT grains. Meanwhile, by using ACRT in THM process, the microscopic interface was changed from a diffused one to cellular or even planar one (at suitable ACRT parameters), through which the trapped Te inclusions was decreased for one order. An ingot grown by THM with constant rotation rate of 40 rpm was also grown, which have also reduced the interface curvature in macro-scale and Te inclusions to some extent, but the effects are not as significant as ACRT with high crucible rotation rate.

中文翻译：

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ACRT对THM工艺中CdZnTe晶体生长界面的改性

摘要 在探测器级 CdZnTe (CZT) 晶体的移动加热器法 (THM) 生长过程中引入了加速坩埚旋转技术 (ACRT)，以调节熔体中的对流并改变生长界面形态。几个直径为 53 毫米的铸锭是通过有/没有 ACRT 的 THM 生长的。在生长过程中对锭进行淬火以显示生长界面的宏观和微观形态。结果表明，通过使用 ACRT，生长界面可以根据 ACRT 参数从凹面变为平坦甚至凸面，这有利于减少熔体中的形核以获得更大的 CZT 晶粒。同时，通过在 THM 过程中使用 ACRT，微观界面从扩散界面变为蜂窝界面甚至平面界面（在合适的 ACRT 参数下），捕获的 Te 夹杂物减少了一级。还生长了由THM以40 rpm的恒定转速生长的铸锭，这也一定程度上降低了宏观尺度的界面曲率和Te夹杂物，但效果不如ACRT高坩埚转速显着。