Resolving Crystallization Kinetics of GeTe Phase-Change Nanoparticles by Ultrafast Calorimetry.,Crystal Growth & Design

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Resolving Crystallization Kinetics of GeTe Phase-Change Nanoparticles by Ultrafast Calorimetry.
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2017-12-06 , DOI: 10.1021/acs.cgd.7b01498
Bin Chen ₁ , Dennis de Wal ₁ , Gert H Ten Brink ₁ , George Palasantzas ₁ , Bart J Kooi ₁

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Chalcogenide-based phase change materials (PCMs) are promising candidates for the active element in novel electrical nonvolatile memories and have been applied successfully in rewritable optical disks. Nanostructured PCMs are considered as the next generation building blocks for their low power consumption, high storage density, and fast switching speed. Yet their crystallization kinetics at high temperature, the rate-limiting property upon switching, faces great challenges due to the short time and length scales involved. Here we present a facile method to synthesize highly controlled, ligand-free GeTe nanoparticles, an important PCM, with an average diameter under 10 nm. Subsequent crystallization by slow and ultrafast rates allows unravelling of the crystallization kinetics, demonstrating the breakdown of Arrhenius behavior for the crystallization rate and a fragile-to-strong transition in the viscosity as well as the overall crystal growth rate for the as-deposited GeTe nanoparticles. The obtained results pave the way for further development of phase-change memory based on GeTe with sub-lithographic sizes.

中文翻译：

通过超快量热法解析 GeTe 相变纳米粒子的结晶动力学。

基于硫族化物的相变材料（PCM）是新型电非易失性存储器中有源元件的有希望的候选者，并且已成功应用于可重写光盘。纳米结构 PCM 因其低功耗、高存储密度和快速切换速度而被认为是下一代构建模块。然而，由于所涉及的时间和长度尺度较短，它们在高温下的结晶动力学以及转换时的限速特性面临着巨大的挑战。在这里，我们提出了一种简便的方法来合成高度受控、无配体的 GeTe 纳米颗粒，这是一种重要的 PCM，平均直径低于 10 nm。随后的慢速和超快结晶可以揭示结晶动力学，证明阿伦尼乌斯行为对结晶速率的破坏、粘度从脆到强的转变以及沉积态 GeTe 纳米颗粒的整体晶体生长速率。所获得的结果为进一步开发亚光刻尺寸的基于GeTe的相变存储器铺平了道路。

更新日期：2017-12-22

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