Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx,Advanced Electronic Materials

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Processes and Effects of Oxygen and Moisture in Resistively Switching TaOx and HfOx
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2017-12-06 , DOI: 10.1002/aelm.201700458
Michael Lübben _{1,

2} , Stefan Wiefels _{1,

2} , Rainer Waser _{1,

2,

3} , Ilia Valov _{2,

3}

Affiliation

Foreign components such as dopants and impurities in molecular or ionic form may significantly influence forming/switching processes in redox‐based memories. This work presents a systematic study and discussion on effects of oxygen and moisture in Ta₂O₅ and HfO₂ thin films, being two of the most used materials for redox‐based resistively switching random access memories. Whereas oxygen is found to not affect the device behavior, the presence of moisture profoundly influences it. It plays a crucial role for the counter electrode reaction, providing additional charged species and enabling the formation of oxygen vacancies, thus determining the forming voltage and the kinetics of this process. Here, methods for incorporation of moisture within the oxide films and its defect chemistry are discussed. Based on the standard electrode potentials and analysis of the electrochemical processes at both electrodes, it is possible to predict their sequence during switching. The difference using symmetric cells with inert electrodes Pt/MeO_x/Pt and asymmetric devices with ohmic electrodes Me/MeO_x/Pt is explained by the electrochemical reaction sequence and ability of the ohmic electrode to undergo redox reactions. Upon oxidation the Me electrode can either exchange O²⁻ with the oxide or can be a source for cations within the MeO_x, keeping the balance between oxygen rich/deficient matrix.

中文翻译：

TaOx和HfOx电阻转换过程中的氧气和水分的过程和影响

杂质或分子或离子形式的杂质等杂质可能会严重影响基于氧化还原的存储器中的形成/转换过程。这项工作对Ta ₂ O ₅和HfO _2中的氧气和水分的影响进行了系统的研究和讨论。薄膜，是基于氧化还原的电阻式开关随机存取存储器中最常用的两种材料。尽管发现氧气不会影响设备的性能，但水分的存在会对其产生深远的影响。它对反电极反应起着至关重要的作用，它提供了更多的带电物质并能够形成氧空位，从而决定了该过程的形成电压和动力学。在此，讨论了在氧化物膜中掺入水分的方法及其缺陷化学。基于标准电极电势和两个电极上的电化学过程分析，可以预测它们在切换期间的顺序。使用带有惰性电极Pt / MeO _x的对称池的区别/ Pt和带有欧姆电极Me / MeO _x / Pt的不对称器件通过电化学反应顺序和欧姆电极发生氧化还原反应的能力来解释。氧化后，Me电极可以与氧化物交换O ^2-，也可以成为MeO _x中阳离子的来源，从而保持富氧/贫氧基质之间的平衡。

更新日期：2017-12-06

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