The engineering of advanced materials for lattice‐matched magnetic heterostructures with remarkable magnetoelectric properties is of particular importance for future spintronic devices. Here, epitaxial CuN films with highly tunable lattice constant and resistivity are fabricated. The lattice constant of the CuN films is controlled from 0.362 to 0.388 nm, and the resistivity is varied over a range of more than two orders of magnitude. Lattice‐matched CuN/Co₂Fe_0.4Mn_0.6Si (CFMS) heterostructures are achieved. A dramatic enhancement of the thermal stability of the heterostructure over that of Cu/CFMS is observed. Furthermore, magnetoresistance nanojunctions are fabricated using lattice‐matched CuN spacers, and an enhancement of the magnetoresistance effect at high annealing temperatures is observed. This work shows that the manipulation of the lattice constant and resistivity of CuN films in lattice‐matched heterostructures can be important for engineering future advanced electronic materials for the development of spintronic devices.

中文翻译：

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具有高可调谐晶格常数的外延CuN膜，用于晶格匹配的磁性异质结构，具有增强的热稳定性

具有出色的磁电特性的晶格匹配磁异质结构的先进材料工程对于未来的自旋电子器件尤为重要。在此，制造了具有高度可调的晶格常数和电阻率的外延CuN膜。CuN膜的晶格常数控制在0.362至0.388nm之间，并且电阻率在大于两个数量级的范围内变化。晶格匹配的CuN / Co ₂ Fe _0.4 Mn _0.6Si（CFMS）异质结构得以实现。观察到异质结构的热稳定性比Cu / CFMS的显着提高。此外，使用晶格匹配的CuN隔离层制造了磁阻纳米结，并且在高退火温度下观察到了磁阻效应的增强。这项工作表明，对晶格匹配的异质结构中的CuN薄膜的晶格常数和电阻率进行控制，对于设计未来用于自旋电子器件开发的高级电子材料可能非常重要。