Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures,Wiley Interdisciplinary Reviews: Computational Molecular Science

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Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures
Wiley Interdisciplinary Reviews: Computational Molecular Science ( IF 16.8 ) Pub Date : 2017-11-29 , DOI: 10.1002/wcms.1353
Jijun Zhao ₁ , Kai Cheng ₁ , Nannan Han ₁ , Junfeng Zhang ₂

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Two‐dimensional (2D) lateral heterostructures open a new avenue for intentional design of novel 2D devices with superior electronic and optoelectronic properties. Since 2012, many groups have successfully synthesized lateral graphene/h‐BN heterostructures on metal substrates and the fabrication of in‐plane heterostructures of transition metal dichalcogenides has also been reported since 2014. In this review, we first present an overview on recent progress of the experimental fabrications of 2D lateral heterostructures, along with the growth mechanism from atomistic simulations. The atomic structures of interfaces, electronic and thermal transport properties across interfaces for some 2D lateral heterojunctions are then discussed. Our current theoretical understanding on the band alignments and electronic properties as well as potential device applications of these lateral heterostructures are summarized. Finally, we give a perspective on this fast‐growing field. WIREs Comput Mol Sci 2018, 8:e1353. doi: 10.1002/wcms.1353

中文翻译：

二维横向异质结构的生长控制，界面行为，能带对准和潜在的器件应用

二维（2D）横向异质结构为有意设计具有卓越电子和光电特性的新型2D设备开辟了一条新途径。自2012年以来，许多小组已成功合成了横向石墨烯/ h自2014年以来，也已经报道了金属基底上的BN异质结构和过渡金属二卤化物的面内异质结构的制造。在这篇综述中，我们首先概述2D横向异质结构的实验制造的最新进展以及发展趋势。原子模拟的机理。然后讨论了一些2D横向异质结的界面原子结构，跨界面的电子和热传输性质。总结了我们目前对这些横向异质结构的能带排列和电子特性以及潜在的器件应用的理论理解。最后，我们对这个快速发展的领域给出了看法。电线计算科学2018，8：e1353。doi：10.1002 / wcms.1353

更新日期：2017-11-29

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