Growth, characterization and optoelectronic applications of pure-phase large-area CsPb2Br5 flake single crystals†,Journal of Materials Chemistry C

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Growth, characterization and optoelectronic applications of pure-phase large-area CsPb2Br5 flake single crystals†
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-11-27 00:00:00 , DOI: 10.1039/c7tc04834c
Zhaojun Zhang _{1,

2,

3,

4,

5} , Yanming Zhu _{1,

2,

3,

4,

5} , Weiliang Wang _{1,

2,

3,

4,

5} , Wei Zheng _{2,

3,

4,

5,

6} , Richeng Lin _{1,

2,

3,

4,

5} , Feng Huang _{2,

3,

4,

5,

6}

Affiliation

To clarify the controversies on CsPb₂Br₅ and extend its optoelectronic applications, from a thermodynamic equilibrium growth system, pure phase high quality CsPb₂Br₅ single crystals (maximum area: 5 × 5 mm², minimum thickness: 160 nm) were successfully obtained. Optical characterization results indicated a 3.87 eV bandgap for CsPb₂Br₅, clarifying the controversies on CsPb₂Br₅. The fabricated photodetector showed a sensitive and fast deep-UV photoresponse, demonstrating the potential applications of CsPb₂Br₅ in deep-UV detection. Theoretical calculations suggested that the wide bandgap of CsPb₂Br₅ resulted from its layered structure and short Pb–Br bonds.

中文翻译：

纯相大面积CsPb ₂ Br ₅片状单晶的生长，表征和光电应用†

为了阐明关于CsPb ₂ Br ₅的争议并扩展其光电应用，从热力学平衡生长系统成功地获得了纯相高质量CsPb ₂ Br ₅单晶（最大面积：5×5 mm ²，最小厚度：160 nm）。获得。光学表征结果表明CsPb ₂ Br _5的带隙为3.87 eV ，从而澄清了CsPb ₂ Br ₅的争议。制成的光电探测器显示出灵敏且快速的深紫外光响应，证明了CsPb ₂ Br ₅的潜在应用在深紫外线检测中。理论计算表明，CsPb ₂ Br _5的带隙宽是由于其层状结构和短的Pb-Br键所致。

更新日期：2017-11-27

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