Abstract The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs multiple quantum wells (MQWs) grown by chemical beam epitaxy (CBE) are studied by photoluminescence (PL) at 77 K. The results show that the optical quality of the MQWs improves significantly after RTA. With increasing RTA temperature, PL peak energy of the MQWs redshifts below 1023 K, while it blueshifts above 1023 K. Two competitive processes which occur simultaneously during RTA result in redshift at low temperature and blueshift at high temperature. It is also found that PL peak energy shift can be explained neither by nitrogen diffusion out of quantum wells nor by nitrogen reorganization inside quantum wells. PL peak energy shift can be quantitatively explained by a modified recombination coupling model in which redshift nonradiative recombination and blueshift nonradiative recombination coexist. The results obtained have significant implication on the growth and RTA of GaNAs material for high performance optoelectronic device application.

中文翻译：

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快速热退火引起的 GaN/GaAs 多量子阱红移和蓝移

摘要 通过 77 K 光致发光 (PL) 研究了快速热退火 (RTA) 对化学束外延 (CBE) 生长的 GaNAs/GaAs 多量子阱 (MQW) 光学性能的影响。的 MQW 在 RTA 后显着改善。随着RTA温度的升高，MQWs的PL峰值能量红移低于1023 K，而它在1023 K以上蓝移。RTA期间同时发生的两个竞争过程导致低温红移和高温蓝移。还发现 PL 峰值能量偏移既不能用量子阱外的氮扩散来解释，也不能用量子阱内的氮重组来解释。PL 峰值能量偏移可以通过改进的复合耦合模型定量解释，其中红移非辐射复合和蓝移非辐射复合共存。获得的结果对用于高性能光电器件应用的 GaNAs 材料的生长和 RTA 具有重要意义。