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Precursor gas composition optimisation for large area boron doped nano-crystalline diamond growth by MW-LA-PECVD
Carbon ( IF 10.9 ) Pub Date : 2018-03-01 , DOI: 10.1016/j.carbon.2017.11.063
A. Taylor , P. Ashcheulov , P. Hubík , L. Klimša , J. Kopeček , Z. Remeš , Z. Vlčková Živcová , M. Remzová , L. Kavan , E. Scheid , J. Lorinčík , V. Mortet

Abstract We report on the optimisation of precursor gas composition for the repeatable preparation of large area highly conductive boron doped nano-crystalline diamond layers with low sp 2 content using microwave plasma enhanced linear antenna chemical vapour deposition apparatus. The precursor gas composition parameter space was probed by varying the boron, oxygen and carbon atomic ratios whilst fixing all other parameters constant. By radically increasing the B content and careful consideration of the B and O content in the gas phase, thin B-NCD layers (∼300 nm) were prepared over large areas, repeatable, with high boron concentrations (∼2 × 10 21 at/cm 3 ) and electrical conductivity levels akin to B-NCD layers prepared in conventional MW PECVD systems (>35 S cm −1 ) with electrochemical properties suitable for industrial applications.

中文翻译:

MW-LA-PECVD大面积掺硼纳米晶金刚石生长的前驱气体成分优化

摘要 我们报告了使用微波等离子体增强线性天线化学气相沉积设备可重复制备大面积高导电硼掺杂纳米晶金刚石层的前体气体组成的优化,该纳米晶金刚石层具有低 sp 2 含量。通过改变硼、氧和碳原子比同时固定所有其他参数恒定来探测前体气体组成参数空间。通过从根本上增加 B 含量并仔细考虑气相中的 B 和 O 含量,在大面积上制备了薄 B-NCD 层(~300 nm),可重复,具有高硼浓度(~2 × 10 21 at / cm 3 ) 和类似于在传统 MW PECVD 系统 (>35 S cm -1 ) 中制备的 B-NCD 层的电导率水平,具有适用于工业应用的电化学特性。
更新日期:2018-03-01
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