Abstract In this work, reduced threading dislocation density AlN on (0 0 0 1) 6H-SiC was realized through the use of reduced temperature AlN interlayers in the metalorganic chemical vapor deposition growth. We explored the dependence of the interlayer growth temperature on the AlN crystal quality, defect density, and surface morphology. The crystal quality was characterized using omega rocking curve scans and the threading dislocation density was determined by plan view transmission electron microscopy. The growth resulted in a threading dislocation density of 7 × 108 cm−2 indicating a significant reduction in the defect density of AlN in comparison to direct growth of AlN on SiC (∼1010 cm−2). Atomic force microscopy images demonstrated a clear step-terrace morphology that is consistent with step flow growth at high temperature. Reducing the interlayer growth temperature increased the TD inclination and thus enhanced TD-TD interactions. The TDD was decreased via fusion and annihilation reactions.

中文翻译：

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通过使用低温中间层在碳化硅上实现低螺纹位错密度氮化铝

摘要 在这项工作中，通过在金属有机化学气相沉积生长中使用降低温度的 AlN 夹层，在 (0 0 0 1) 6H-SiC 上实现了降低的穿透位错密度 AlN。我们探索了层间生长温度对 AlN 晶体质量、缺陷密度和表面形态的依赖性。使用欧米茄摇摆曲线扫描表征晶体质量，并通过平面图透射电子显微镜确定螺纹位错密度。生长导致螺纹位错密度为 7 × 108 cm-2，表明与在 SiC 上直接生长 AlN（~1010 cm-2）相比，AlN 的缺陷密度显着降低。原子力显微镜图像显示出清晰的阶梯形形态，这与高温下的阶梯流生长一致。降低层间生长温度会增加 TD 倾角，从而增强 TD-TD 相互作用。TDD 通过聚变和湮灭反应降低。