Based on the careful design of two-terminal devices from multi-layer transition metal dichalcogenides (TMDs) such as MoS₂ and WSe₂, truly vertical transport has been experimentally evaluated and theoretically analyzed. By exploring, the electric field and temperature dependence of in total 28 TMD devices of various thicknesses, a model that describes vertical transport as Fowler Nordheim mediated at high electric fields and thermal injection dominated at low fields has been developed. Our approach is similar to the description chosen to capture gate leakage current levels through amorphous materials such as SiO₂. Employing our quantitative analysis, an effective vertical transport mass of m*/m₀ (MoS₂) ≈ 0.18 and m*/m₀ (WSe₂) ≈ 0.14 has been extracted for the first time and barriers at the metal contact-to-TMD interface of heights similar to those extracted for lateral transport in TMD transistors have been confirmed.

中文翻译：

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通过过渡金属二卤化物进行垂直电荷传输–定量分析

基于多层过渡金属_二卤化金属（TMD）（例如MoS ₂和WSe ₂）的两端子器件的精心设计，已经通过实验评估和理论分析了真正的垂直传输。通过探索，共有28种不同厚度的TMD器件的电场和温度依赖性，已开发出一种模型，该模型描述了在高电场下Fowler Nordheim介导的垂直传输和在低场主导的热注入。我们的方法类似于为捕获通过诸如SiO _2之类的非晶材料捕获栅极泄漏电流而选择的描述。利用我们的定量分析，有效垂直传输质量为m * / m ₀（MoS ₂）≈0.18和m * / m ₀（WSe ₂）≈0.14首次提取，并且金属接触到TMD界面处的势垒类似于在TMD晶体管中横向传输所提取的势垒。确认的。