Spin-dependent electron transport in C and Ge doped BN monolayers,Physical Chemistry Chemical Physics

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Spin-dependent electron transport in C and Ge doped BN monolayers
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2017-10-30 00:00:00 , DOI: 10.1039/c7cp05596j
Sanjeev K. Gupta _{1,

2,

3} , Haiying He _{3,

4,

5,

6} , Igor Lukačević _{7,

8,

9,

10} , Ravindra Pandey _{1,

2,

3}

Affiliation

Recent advances in the synthesis and characterization of h-BN monolayers offer opportunities to tailor their electronic properties via aliovalent substitutions in the lattice. In this paper, we consider a h-BN monolayer doped with C or Ge, and find that dopants modify the Fermi level of the pristine monolayer. Three-fold coordinated dopants relax to the convex-shaped structures, while four-fold coordinated ones retain the planar structures. These modifications, in turn, lead to unique features in the electron transport characteristics including significant enhancement of current at the dopant site, diode-like asymmetric current–voltage response, and spin-dependent current. We find that the spin-polarized transport properties of the doped BN monolayers could be used for the next-generation devices at the nanoscale.

中文翻译：

C和Ge掺杂的BN单层中依赖自旋的电子传输

h-BN单层的合成和表征方面的最新进展提供了通过以下方法调整其电子性能的机会晶格中的异价取代。在本文中，我们考虑了掺杂有C或Ge的h-BN单层，发现掺杂剂会改变原始单层的费米能级。三重配位的掺杂剂弛豫成凸形结构，而四重配位的掺杂剂保留平面结构。这些修改反过来导致电子传输特性的独特特征，包括掺杂点处电流的显着增强，类似二极管的不对称电流-电压响应以及自旋相关电流。我们发现，掺杂的BN单层的自旋极化传输性质可以用于纳米级的下一代设备。

更新日期：2017-11-22

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