Abstract Dilute nitride InGaAsSbN layers grown by low-temperature liquid phase epitaxy are studied in comparison with quaternary InGaAsN layers grown at the same growth conditions to understand the effect of Sb in the alloy. The lattice mismatch to the GaAs substrate is found to be slightly larger for the InGaAsSbN layers, which is explained by the large atomic radius of Sb. A reduction of the band gap energy with respect to InGaAsN is demonstrated by means of photoluminescence (PL), surface photovoltage (SPV) spectroscopy and tight-binding calculations. The band-gap energies determined from PL and ellipsometry measurements are in good agreement, while the SPV spectroscopy and the tight-binding calculations provide lower values. Possible reasons for these discrepancies are discussed. The PL spectra reveal localized electronic states in the band gap near the conduction band edge, which is confirmed by SPV spectroscopy. The analysis of the power dependence of the integrated PL has allowed determining the dominant radiative recombination mechanisms in the layers. The values of the refraction index in a wide spectral region are found to be higher for the Sb containing layers.

中文翻译：

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液相外延生长的厚 InGaAsSbN 层中 Sb 的影响

摘要 研究了低温液相外延生长的稀氮化物 InGaAsSbN 层与相同生长条件下生长的四元 InGaAsN 层的比较，以了解 Sb 在合金中的作用。对于 InGaAsSbN 层，发现与 GaAs 衬底的晶格失配稍大，这是由 Sb 的大原子半径解释的。通过光致发光 (PL)、表面光电压 (SPV) 光谱和紧束缚计算证明了 InGaAsN 带隙能量的降低。由 PL 和椭圆偏振测量确定的带隙能量非常一致，而 SPV 光谱和紧束缚计算提供了较低的值。讨论了这些差异的可能原因。PL 光谱揭示了导带边缘附近带隙中的局部电子态，这由 SPV 光谱证实。对集成 PL 的功率依赖性的分析允许确定各层中的主要辐射复合机制。发现含 Sb 层在宽光谱区域的折射率值更高。